Index of content:
Volume 118, Issue 13, 07 October 2015
Liquid crystalline organic semiconductors are emerging candidates for applications in electronic and photonic devices. One of the most attractive aspects of such materials is the potential, in principle, to easily control and manipulate the molecular alignment of the semiconductor over large length scales. Here, we explore the consequences of alignment in a model smectic liquid crystalline semiconductor, and find that the photogeneration efficiency is a strong function of incident polarization in aligned samples. A straightforward theory shows that such behavior is a general feature of aligned materials, regardless of the details of photophysics. Furthermore, we uncover tentative evidence that the mobility of aligned samples is substantially enhanced. Both of these phenomena are of significant technological importance.
- Photonics, Plasmonics, Lasers, and Optical Phenomena
Effect of in-material losses on terahertz absorption, transmission, and reflection in photonic crystals made of polar dielectrics118(2015); http://dx.doi.org/10.1063/1.4932017View Description Hide Description
The effect of the material absorption factor on terahertz absorption (A), transmittance (T), and reflectance (R) for slabs of PhC that comprise rods made of GaAs, a polar dielectric, is studied. The main goal was to illustrate how critical a choice of the absorption factor for simulations is and to indicate the importance of the possible modification of the absorption ability by using either active or lossy impurities. The spectra of A, T, and R are strongly sensitive to the location of the polaritonic gap with respect to the photonic pass and stop bands connected with periodicity that enables the efficient combination of the effects of material and structural parameters. It will be shown that the spectra can strongly depend on the utilized value of the material absorption factor. In particular, both narrow and wide absorption bands may appear owing to a variation of the material parameters with a frequency in the vicinity of the polaritonic gap. The latter are often achieved at wideband suppression of transmission, so that an ultra-wide stop band can appear as a result of adjustment of the stop bands having different origin. The results obtained at simultaneous variation of the absorption factor and frequency, and angle of incidence and frequency, indicate the possibility of the existence of wide ranges of tolerance, in which the basic features do remain. This allows for mitigating the accuracy requirements for the absorption factor in simulations and promises the efficient absorption of nonmonochromatic waves and beams with a wide angular spectrum. Suppression of narrowband effects in transmission is demonstrated at rather large values of the absorption factor, when they appear due to either the defect modes related to structural defects or dispersion inspired variations of the material parameters in the vicinity of the polaritonic gap. Comparison with auxiliary structures helps one to detect the common features and differences of homogeneous slabs and slabs of a PhC, which are made of GaAs.
118(2015); http://dx.doi.org/10.1063/1.4931375View Description Hide Description
High spectral selectivity of thermal radiation is important for achieving high-efficiency energy systems. In this study, intense, narrowband, and low directional absorption/radiation were observed in closed-end microcavity which is a conventional open-end microcavity covered by a semi-transparent thin metal film. The quality factor (Q factor) of optical absorption band strongly depended on the film electrical conductivity. Asymmetric and narrow absorption band with a Q factor of 25 at 1.28 μm was obtained for a 6-nm-thick Au film. Numerical simulations suggest that the formation of a fixed-end mode at the cavity aperture contributes to the narrowband optical absorption. The closed-end microcavity filled with SiO2 exhibits intense and isotropic thermal radiation over a wide solid angle according to numerical simulation. The narrow and asymmetric absorption spectrum was experimentally confirmed in a model of closed-end microcavity.
Room temperature, single mode emission from two-section coupled cavity InGaAs/AlGaAs/GaAs quantum cascade laser118(2015); http://dx.doi.org/10.1063/1.4932141View Description Hide Description
Room temperature, single mode, pulsed emission from two-section coupled cavity InGaAs/AlGaAs/GaAs quantum cascade laser fabricated by focused ion beam processing is demonstrated and analyzed. The single mode emission is centered at 1059.4 cm−1 (9.44 μm). A side mode suppression ratio of 43 dB was achieved. The laser exhibits a peak output power of 15 mW per facet at room temperature. The stable, single mode emission is observed within temperature tuning range, exhibiting shift at rate of 0.59 nm/K.
- Electrical Discharges, Plasmas, and Plasma-Surface Interactions
118(2015); http://dx.doi.org/10.1063/1.4932150View Description Hide Description
The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O2 of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidation sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.
Vacuum ultra-violet damage and damage mitigation for plasma processing of highly porous organosilicate glass dielectrics118(2015); http://dx.doi.org/10.1063/1.4932202View Description Hide Description
Porous organosilicate glass thin films, with k-value 2.0, were exposed to 147 nm vacuum ultra-violet (VUV) photons emitted in a Xenon capacitive coupled plasma discharge. Strong methyl bond depletion was observed, concomitant with a significant increase of the bulk dielectric constant. This indicates that, besides reactive radical diffusion, photons emitted during plasma processing do impede dielectric properties and therefore need to be tackled appropriately during patterning and integration. The detrimental effect of VUV irradiation can be partly suppressed by stuffing the low-k porous matrix with proper sacrificial polymers showing high VUV absorption together with good thermal and VUV stability. In addition, the choice of an appropriate hard-mask, showing high VUV absorption, can minimize VUV damage. Particular processing conditions allow to minimize the fluence of photons to the substrate and lead to negligible VUV damage. For patterned structures, in order to reduce VUV damage in the bulk and on feature sidewalls, the combination of both pore stuffing/material densification and absorbing hard-mask is recommended, and/or the use of low VUV-emitting plasma discharge.
118(2015); http://dx.doi.org/10.1063/1.4931769View Description Hide Description
The objective of the present work is the development of a tightly coupled magneto-hydrodynamic model for inductively coupled radio-frequency plasmas. Non Local Thermodynamic Equilibrium (NLTE) effects are described based on a hybrid State-to-State approach. A multi-temperature formulation is used to account for thermal non-equilibrium between translation of heavy-particles and vibration of molecules. Excited electronic states of atoms are instead treated as separate pseudo-species, allowing for non-Boltzmann distributions of their populations. Free-electrons are assumed Maxwellian at their own temperature. The governing equations for the electro-magnetic field and the gas properties (e.g., chemical composition and temperatures) are written as a coupled system of time-dependent conservation laws. Steady-state solutions are obtained by means of an implicit Finite Volume method. The results obtained in both LTE and NLTE conditions over a broad spectrum of operating conditions demonstrate the robustness of the proposed coupled numerical method. The analysis of chemical composition and temperature distributions along the torch radius shows that: (i) the use of the LTE assumption may lead to an inaccurate prediction of the thermo-chemical state of the gas, and (ii) non-equilibrium phenomena play a significant role close the walls, due to the combined effects of Ohmic heating and macroscopic gradients.
- Magnetism, Spintronics, and Superconductivity
118(2015); http://dx.doi.org/10.1063/1.4931980View Description Hide Description
Strain mediated structure, magnetic, and transport properties of spinel ferrites were investigated by growing epitaxial Lu x Fe3− x O4 (LFO, ) films on SrTiO3 and MgO substrates with in-plane compressive and tensile strains, respectively. The lattice parameter of LFO films decreases on SrTiO3 substrates, while increases on MgO substrates with the increasing Lu content. The LFO films on SrTiO3 substrates exhibit larger saturation magnetization and smaller exchange bias and coercive field. Phase shift of anisotropic magnetoresistance is also observed in the LFO films on SrTiO3 substrates. In addition, the nonmagnetic Lu3+ ions in spinel ferrites enhance the spin canting, which further increases the exchange bias and coercive field and strengthens the four-fold symmetry of anisotropic magnetoresistance and the two-fold symmetry of planar Hall effect.
Negative spontaneous magnetization and semi-spin glass magnetic order in mixed spinel Co0.6Zn0.4Fe1.7Mn0.3O4118(2015); http://dx.doi.org/10.1063/1.4932033View Description Hide Description
In this paper, we establish the negative spontaneous magnetization in Mn and Zn substituted cobalt ferrite Co0.6 Zn 0.4Fe1.7Mn0.3O4 (CZFMO). It is suggested that the origin of negative spontaneous magnetization is due to the substitution of small sized Mn+4 ions (compared to Fe+3 ions) at the octahedral B site in compound Co0.6 Zn 0.4 Fe2O4. The low value of Poisson's ratio ∼0.202 for this compound possibly contributes towards the easy distortion in the bond length and bond angle, causing increase in Fe-O bond distance/decrease in Fe-O-Fe bond angle with Mn substitution, leading to considerably weak Fe-O-Fe superexchange interaction at the octahedral B site. The neutron diffraction data clearly illustrated the significant reduction in ordered magnetic moment at the B site, with the resultant negative spontaneous magnetization (M = MB − MA ) in this mixed spinel system. The spin disorder also gives rise to an interesting semi-spin glass behavior in CZFMO.
Abnormal thermal expansion, multiple transitions, magnetocaloric effect, and electronic structure of Gd6Co4.85118(2015); http://dx.doi.org/10.1063/1.4931982View Description Hide Description
The structure of known Gd4Co3 compound is re-determined as Gd6Co4.85, adopting the Gd6Co1.67Si3 structure type, which is characterized by two disorder Co sites filling the Gd octahedral and a short Gd-Gd distance within the octahedra. The compound shows uniaxial negative thermal expansion in paramagnetic state, significant negative expansion in ferromagnetic state, and positive expansion below ca. 140 K. It also exhibits large magnetocaloric effect, with an entropy change of −6.4 J kg−1 K−1 at 50 kOe. In the lattice of the compound, Co atoms at different sites show different spin states. It was confirmed by the X-ray photoelectron spectra and calculation of electronic structure and shed lights on the abnormal thermal expansion. The stability of such compound and the origin of its magnetism are also discussed based on measured and calculated electronic structures.
Influence of volume magnetostriction on the thermodynamic properties of Ni-Mn-Ga shape memory alloys118(2015); http://dx.doi.org/10.1063/1.4932527View Description Hide Description
In the present article, the thermodynamic properties of Ni-Mn-Ga ferromagnetic shape memory alloys exhibiting the martensitic transformations (MTs) above and below Curie temperature are compared. It is shown that when MT goes below Curie temperature, the elastic and thermal properties of alloy noticeably depend on magnetization value due to spontaneous volume magnetostriction. However, the separation of magnetic parts from the basic characteristics of MT is a difficult task, because the volume magnetostriction does not qualitatively change the transformational behaviour of alloy. This problem is solved for several Ni-Mn-Ga alloys by means of the quantitative theoretical analysis of experimental data obtained in the course of stress-strain tests. For each alloy, the entropy change and the transformation heat evolved in the course of MT are evaluated, first, from the results of stress-strain tests and, second, from differential scanning calorimetry data. For all alloys, a quantitative agreement between the values obtained in two different ways is observed. It is shown that the magnetic part of transformation heat exceeds the non-magnetic one for the Ni-Mn-Ga alloys undergoing MTs in ferromagnetic state, while the elevated values of transformation heat measured for the alloys undergoing MTs in paramagnetic state are caused by large MT strains.
- Dielectrics, Ferroelectrics, and Multiferroics
118(2015); http://dx.doi.org/10.1063/1.4931615View Description Hide Description
Cationic substitutions in the novel magnetoelectric compound CaBaCo4O7 lead to profound changes in its magnetic and electric behaviors. In this work, we present a structural study of the isovalent substitution Sr-for-Ca in CaBaCo4O7. X-ray diffraction, as well as neutron powder diffraction experiments, are reported for a series of samples Ca1− x Sr x BaCo4O7 with . Special emphasis is given to the identification of the substitution site, as Sr has also been reported to substitute for Ba in this crystal structure. The solubility limit for Sr at the Ca site is shown to be at . The variation of lattice constants with Sr-doping firmly supports the Sr-for-Ca substitution. Rietveld refinements of the Sr-substituted samples are presented, and used as starting point to analyse the local structure around Sr by means of X-ray absorption spectroscopy at the Sr K-edge. Both the near-edge absorption and the extended absorption fine-structure confirm the substitution of Sr for Ca, giving definite support to the proposed nominal formula. In addition, macroscopic magnetization measurements are presented which reveal the striking effects of Sr-substitution over the magnetic landscape of this puzzling compound.
Robust CaZrO3-modified (K, Na)NbO3-based lead-free piezoceramics: High fatigue resistance insensitive to temperature and electric field118(2015); http://dx.doi.org/10.1063/1.4932144View Description Hide Description
Robust resistivity against electrical cycling at not only ambient conditions but also enhanced temperatures is an essential requirement for high-end actuator applications. In this study, the temperature and electric field dependence of unipolar fatigue behaviors of CaZrO3-modfied (K, Na)NbO3 lead-free piezoceramics were investigated. The space charge accumulation during unipolar cycling is responsible for the build-up of internal bias field, the dynamics of which with respect to temperature and driving field can be described using a model based on Maxwell-Wagner relaxation process. Besides, clamping of domain walls can be inferred by comparing the large and small signal permittivity. Most intriguingly, the unipolar strain exhibits a fatigue-free behavior even at elevated temperatures, rendering the material exceptionally suitable for actuator applications.
118(2015); http://dx.doi.org/10.1063/1.4932225View Description Hide Description
First principles calculations are employed to identify atomistic pathways for the generation of vacancy-interstitial pair defects in TiO2. We find that the formation of both oxygen and titanium defects induces a net dipole moment indicating that their formation can be assisted by an electric field. We also show that the activation barrier to formation of an oxygen vacancy defect can be reduced by trapping of holes which may be injected by the electrode. The calculated activation energies suggest that generation of titanium defects is more favorable than generation oxygen defects although activation energies in both cases are relatively high (>3.3 eV). These results provide much needed insight into an issue that has been widely debated but for which little definitive experimental information is available.
- Physics of Nanoscale, Mesoscale, and Low-Dimensional Systems
Characterization of carrier transport properties in strained crystalline Si wall-like structures in the quasi-quantum regime118(2015); http://dx.doi.org/10.1063/1.4931151View Description Hide Description
We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si “wall-like” long-channels that were surrounded by a thermally grown SiO2 layer. The strained buffering depth inside the Si region (due to Si/SiO2 interfacial lattice mismatch) is where scattering is seen to enhance some modes of the carrier-lattice interaction, while suppressing others, thereby changing the relative value of the effective masses of both electrons and holes, as compared to bulk Si. In the narrowest wall devices, a considerable increase in conductivity was observed as a result of higher carrier mobilities due to lateral constriction and strain. The strain effects, which include the reversal splitting of light- and heavy-hole bands as well as the decrease of conduction-band effective mass by reduced Si bandgap energy, are formulated in our microscopic model for explaining the experimentally observed enhancements in both conduction- and valence-band mobilities with reduced Si wall thickness. Also, the enhancements of the valence-band and conduction-band mobilities are found to be associated with different aspects of theoretical model.
118(2015); http://dx.doi.org/10.1063/1.4932143View Description Hide Description
Experimental results of the search for inorganic fullerenes are presented. Mo nSm − and WnSm − clusters are generated with a pulsed arc cluster ion source equipped with an annealing stage. This is known to enhance fullerene formation in the case of carbon. Analogous to carbon, the mass spectra of the metal chalcogenide clusters produced in this way exhibit a bimodal structure. The species in the first maximum at low mass are known to be platelets. Here, the structure of the species in the second maximum is studied by anion photoelectron spectroscopy, scanning transmission electron microscopy, and scanning tunneling microcopy. All experimental results indicate a two-dimensional structure of these species and disagree with a three-dimensional fullerene-like geometry. A possible explanation for this preference of two-dimensional structures is the ability of a two-element material to saturate the dangling bonds at the edges of a platelet by excess atoms of one element. A platelet consisting of a single element only cannot do this. Accordingly, graphite and boron might be the only materials forming nano-spheres because they are the only single element materials assuming two-dimensional structures.
118(2015); http://dx.doi.org/10.1063/1.4932151View Description Hide Description
200 nm thick SiO2 layers grown on Si substrates were implanted with 150 keV Ge ions at three different fluences. As-implanted samples were characterized with time-of-flight secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain depth profiles and concentration of Ge ions. As-implanted samples were annealed at 950 °C for 30 min. Crystalline quality of pristine, as-implanted, and annealed samples was investigated using Raman scattering measurements and the results were compared. Crystalline structure of as-implanted and annealed samples of embedded Ge into SiO2 matrix was studied using x-ray diffraction. No secondary phase or alloy formation of Ge was detected with x-ray diffraction or Raman measurements. Scanning transmission electron microscope measurements were done to get the nanocrystal size and localized information. The results confirmed that fluence dependent Ge nanocrystals of different sizes are formed in the annealed samples. It is also observed that Ge is slowly diffusing deeper into the substrate with annealing.
Chemically assembled double-dot single-electron transistor analyzed by the orthodox model considering offset charge118(2015); http://dx.doi.org/10.1063/1.4931611View Description Hide Description
We present the analysis of chemically assembled double-dot single-electron transistors using orthodox model considering offset charges. First, we fabricate chemically assembled single-electron transistors (SETs) consisting of two Au nanoparticles between electroless Au-plated nanogap electrodes. Then, extraordinary stable Coulomb diamonds in the double-dot SETs are analyzed using the orthodox model, by considering offset charges on the respective quantum dots. We determine the equivalent circuit parameters from Coulomb diamonds and drain current vs. drain voltage curves of the SETs. The accuracies of the capacitances and offset charges on the quantum dots are within ±10%, and ±0.04e (where e is the elementary charge), respectively. The parameters can be explained by the geometrical structures of the SETs observed using scanning electron microscopy images. Using this approach, we are able to understand the spatial characteristics of the double quantum dots, such as the relative distance from the gate electrode and the conditions for adsorption between the nanogap electrodes.
118(2015); http://dx.doi.org/10.1063/1.4932034View Description Hide Description
In the framework of the kinetic-collective model of phonon heat transport, we analyze how each range of the phonon frequency spectrum contributes to the total thermal conductivity both in the macro and the nanoscale. For this purpose, we use two case study samples: naturally occurring bulk silicon and a 115 nm of diameter silicon nanowire. We show that the contribution of high-energy phonons (optic branches) is non-negligible only when N-collisions are strongly present. This contribution increases when the effective size of the sample decreases, and it is found to be up to a 10% at room temperature for the 115 nm nanowire, corroborating preliminar ab-initio predictions.
Influence of substrate microcrystallinity on the orientation of laser-induced periodic surface structures118(2015); http://dx.doi.org/10.1063/1.4932215View Description Hide Description
The research in this paper deals with the angular dependence of the formation of laser-induced periodic surface structures (LIPSS) by linearly polarized nanosecond laser pulses on polycrystalline austenitic stainless steel. Incident angles ranging from 45° to 70° lead to the generation of superimposed merely perpendicular oriented LIPSS on steel as well as on monocrystalline (100) silicon which was used as a reference material. Additional extraordinary orientations of superimposing LIPSS along with significantly different periodicities are found on polycrystalline steel but not on (100) silicon. Electron backscatter diffraction measurements indicate that the expansion of these LIPSS is limited to the grain size and affected by the crystal orientation of the individual grains. Atomic force microscopy imaging shows that LIPSS fringe heights are in good agreement with the theoretically predicted penetration depths of surface plasmon polaritons into stainless steel. These results indicate that optical anisotropies must be taken into account to fully describe the theory of light-matter interaction leading to LIPSS formation.
- Physics of Devices and Sensors
118(2015); http://dx.doi.org/10.1063/1.4932021View Description Hide Description
We determine the full photon number response of a NbN superconducting nanowire single photon detector via quantum detector tomography, and the results show the separation of linear, effective absorption efficiency from the internal detection efficiencies. In addition, we demonstrate an error budget for the complete quantum characterization of the detector. We find that for short times, the dominant noise source is shot noise, while laser power fluctuations limit the accuracy for longer timescales. The combined standard uncertainty of the internal detection efficiency derived from our measurements is about 2%.