GaAs quantum structures: Comparison between direct pseudopotential and single‐band truncated‐crystal calculations
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10.The results of Rama Krishna and Friesner agree with experimental photoluminescence data, that involves, most likely, gap states. The absorption threshold energy, however, is higher than the photoluminescence energy (although lower than the direct band gap of Silicon);
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10.D.J. Lockwood and A.G. Wang, Solid State Commun. 94, 905 (1995)., Solid State Commun.The results of the direct pseudopotential calculation of Ref. 9 agree very well with this absorption data.
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13.We make the assumption here that the energy dispersion of the bulk band n can be described by an analytic function of , , and . This is always true for the zinc-blende structure.
14.The zero-confinement character of the valence-band maximum is a property of free-standing 2D quantum films, where the VBM wave function is required to vanish at the boundaries. When a film is embedded in a barrier semiconductor, e.g., GaAs in AlGaAs, no zero-confinement state occurs. See, for example,
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16.The wave vectors of the valleys are located along the Τ -X lines of the Brillouin zone at a distance 0.855 from the zone center.
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