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Simplified embedding schemes for the quantum-chemical description of neutral and charged point defects in and related dielectrics
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10.1063/1.1323957
/content/aip/journal/jcp/113/23/10.1063/1.1323957
http://aip.metastore.ingenta.com/content/aip/journal/jcp/113/23/10.1063/1.1323957
/content/aip/journal/jcp/113/23/10.1063/1.1323957
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/content/aip/journal/jcp/113/23/10.1063/1.1323957
2000-12-15
2014-12-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simplified embedding schemes for the quantum-chemical description of neutral and charged point defects in SiO2 and related dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/jcp/113/23/10.1063/1.1323957
10.1063/1.1323957
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