Volume 115, Issue 13, 01 October 2001
Index of content:
115(2001); http://dx.doi.org/10.1063/1.1406531View Description Hide Description
The absorption of radiation [λ200–260 nm] by the collision complex produces with an average yield of odd-nitrogen per absorbed photon. This process is also a new source of isotope enriched odd-nitrogen in the atmospheres.
115(2001); http://dx.doi.org/10.1063/1.1407844View Description Hide Description
Negatively charged benzene clusters, were produced by injecting low- and high-energy electrons into an intense supersonic jet expansion. Threshold size of was observed by slow-electron attachment, while the smaller with were also observed through the fragmentation of larger by high-energy electron attachment. Photoelectron spectroscopy for with has revealed a bulklike electron solvated state in through the vertical detachment energies (VDEs) versus relationship.
Large enhancement in dissociative electron attachment to HCl adsorbed on ice via transfer of presolvated electrons115(2001); http://dx.doi.org/10.1063/1.1406499View Description Hide Description
We report that dissociative electron attachment (DEA) to HCl is strongly enhanced by adsorption on the surface of ice. The absolute DEA cross section at for HCl adsorbed on ice is measured to be which is two orders of magnitude higher than in the gas phase. This enhancement is essentially due to electron transfer from precursor states of the solvated electron in ice to an unfilled molecular orbital of HCl followed by its dissociation. This study indicates that electron-induced dissociation may be a significant process leading to HCl dissociation on icesurfaces in polar stratosphericclouds due to ionization by cosmic rays.
115(2001); http://dx.doi.org/10.1063/1.1407005View Description Hide Description
Large-scale of crystalline GaNnanowires have been fabricated through chemical-vapor deposition in the nanochannels of the anodic alumina template. X-ray diffraction and selected area electron diffractionpattern investigations indicate that the nanowires are single crystal with hexagonal wurtzite structure. A typical scanning electron microscopy image and the energy dispersive x-ray spectroscopy results indicate that indium nanoparticles only act as catalyst in GaNnanowires growth. At room temperature, photoluminescence spectrum of the GaNnanowire arrays shows a visible broadband with three peaks, which are located at about 363, 442, and 544 nm. The light emission may be attributed to GaN band-edge emission, the existence of defects or surface states, and the interaction between the ordered GaNnanowires and anodic alumina membrane. The growth mechanism of crystalline GaNnanowires is discussed. The method makes it possible to synthesize other nitride nanowire arrays.