The device configuration. Electrodes are of and Ti. The gap between the electrodes is . The thermally grown of is used as a gate oxide and the doped Si substrate is used as a gate.
(a) The monomer [mono-tetra(-phenylene vinylene)] and a schematic representation of a helical stack formed by this molecule. The bars represent and the triangles represent the hydrogen-bonding urideo-triazine units. (b) The monomer [oligo(-phenylene vinylene)-triazine] and a schematic representation of the helical stack formed by this monomer. (c) The bishydroxy oligomer. These monomers self-assemble into sheets that then probably roll up into supramolecular tapes.
An AFM image of wires lying across electrodes.
(a) An AFM image of the wires on the electrodes. The wires were drop cast from heptane . (b) An AFM image of bishydroxy wires on the electrodes. The wires were drop cast from toluene .
(a) An AFM image of the wires drop cast on a substrate containing carbon nanotubes. The carbon nanotube is indicated by the arrow. All other wires are . (b) An EFM image of the same region as in (a). The conducting carbon nanotube shows a clear signal in contrast to the insulating wires.
Article metrics loading...
Full text loading...