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Negative differential resistance and switching behavior of redox-mediated tunnel contact
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10.1063/1.2770725
/content/aip/journal/jcp/127/8/10.1063/1.2770725
http://aip.metastore.ingenta.com/content/aip/journal/jcp/127/8/10.1063/1.2770725
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Figures

Image of FIG. 1.
FIG. 1.

Electron energy scheme. At zero overpotential and small bias voltage the equilibrium positions of the electron energy level of the oxidized and reduced form of the bridge group are located outside the energy window between the Fermi levels of the metals. is the equilibrium value of the phonon coordinate corresponding to the reduced state.

Image of FIG. 2.
FIG. 2.

Dependence of the tunnel current on the overpotential according to Eqs. (10)–(16), where , , , , , and .

Image of FIG. 3.
FIG. 3.

Dependence of the tunnel current on the bias voltage according to Eqs. (10)–(17), where , , , , , and .

Image of FIG. 4.
FIG. 4.

Dependence of the tunnel current on the overpotential according to Eq. (24), where and for (1) and (2) .

Image of FIG. 5.
FIG. 5.

Dependence of the Fano factor on the overpotential according to Eq. (30). For , (1) , (2) , and (3) .

Image of FIG. 6.
FIG. 6.

Dependence of the telegraph noise on the overpotential according to Eqs. (31) and (32). For , (1) , (2) , and (3) .

Image of FIG. 7.
FIG. 7.

Electron energy scheme demonstrating the information processing. At zero bias voltage a pulselike application of positive cathodic overpotential (write) converts the oxidized state of the bridge group to the reduced state. The application of the bias voltage (read) results in a tunnel current through the contact. The application of the negative overpotential (erase) converts the reduced state to the oxidized one. Dashed arrows show the shift to the intermediate positions and subsequent relaxation to the equilibrium ones (see explanations in the text).

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/content/aip/journal/jcp/127/8/10.1063/1.2770725
2007-08-31
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Negative differential resistance and switching behavior of redox-mediated tunnel contact
http://aip.metastore.ingenta.com/content/aip/journal/jcp/127/8/10.1063/1.2770725
10.1063/1.2770725
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