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(a) Filled-state STM image of a clean Si(100)-2° off vicinal surface, . (b) Filled-state STM image of unidirectional NWs grown along the step edge, . NWs are indicated by black arrows. Inset image shows that most of the terraces were converted to terraces. (c) Magnification of the image in (b), . Each of the ovals delineates a unit cell of . (d) Filled-state STM image of defect structures on the Si surface after removal of the NWs by high temperature annealing, . (, for all images).
Left and middle panels show the Si and Pt core-level spectra with different sample treatments. [(a) and (d)] A clean Si(100)-2° off vicinal surface. [(b) and (e)] NWs grown on the Si surface. [(c) and (f)] Surface after high temperature annealing. The right panel shows the LEED patterns for each sample condition. (g)–(i) show the LEED patterns of the clean Si(100) surface, the reconstructed Si surface with NWs, and the defect induced surface after removing the NWs.
Angle-resolved valence band spectra and angle-resolved photoemission intensity maps were taken in different conditions. [(a) and (d)] A clean Si(100)-2° off vicinal surface taken along the [0 1 1] direction. [(b) and (e)] NWs taken perpendicular to the NWs direction . [(c) and (f)] NWs taken parallel to the NWs ([0 1 1] direction, ). Insets in (a)–(c) show the valence band spectra near the at for each condition.
CLPES curve fitting results for each predicted structure. The peak assignments are as follows: , Si up dimer surface; , defect induced peak; , bulk; , Si second dimer peak; , Pt silicide induced peak; , NW peak; and , Pt diffused surface peak.
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