(a) Experimental total ion yield spectrum of FSMSE in the Si excitation region. Experimental data are cited from Ref. 28. Bars with hatching denote the ionization energies of Si [Me] and Si[F] electrons. (b) Calculated photoabsorption spectrum for Si[Me] electron. (c) Calculated photoabsorption spectrum for Si[F] electron. (d) Summation of calculated photoabsorpion spectra for Si [Me] and Si[F] electrons.
Si photoelectron spectrum of FSMSE as a function of binding energy. Photon energy used was 2000.1 eV. Dots denote experimental data and the curve shows the fitting result using Voigt functions.
Electron emission spectra at several photon energies near the Si ionization thresholds in the region of electron energy from 1590 to 1620 eV. (a) 1842.2 eV. (b) 1845.2 eV. (c) 1847.8 eV. (d) 1949.5 eV (NA electron spectrum). See text for several symbols such as , , and shake-up. NA denotes the peak of normal Auger electrons.
2D map of emitted electron intensity in the Si region. The total ion yield spectrum is displayed at the right end. See text for several symbols such as , , and shake-up. Vertical bars indicate NA electron signals and slant bars denote energy dependences based on some approximations (see text for details).
Main structures in the 2D map of electron spectra (in units of eV). See text for several symbols such as , , , and . (N.B.: Energy value in parentheses denotes the one expected from an assumed quantum defect value.)
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