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Surface chemical modification induces nanometer scale electron confinement in field effect device
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View: Figures


Image of FIG. 1.
FIG. 1.

vs . Note the increase in for increasing for both preactivation and postmodification. The drain-source current was 50 mV. The shift of with increasing reflects the existing charge coupling between the front and back interfaces.

Image of FIG. 2.
FIG. 2.

Capacitance-voltage measurements of preactivated sample (clean), sample treated with activation only and sample treated with activation and modified with APTMS. Note the spreading of the slope postactivation and postmodification in comparison with the slope for bare dialectic. Inset: MS analysis of a preactivated sample (clean), following activation, and modified with APTMS. Both the slope and the -intercept of the treated samples differ from the preactivated sample.

Image of FIG. 3.
FIG. 3.

sensitivity measurements performed pre- activation, post- activation, and post-APTMS modification. As predicted by current literature the sensitivity of EISFET with surface is superior to EISFET covered with . Also, the increase in sensitivity postactivation and the decrease in sensitivity postmodification are evident for both dielectrics.

Image of FIG. 4.
FIG. 4.

vs . The full graphs are preactivation measurements and the dashed lines are postmodification measurements. Note that preactivation two gain peaks are apparent which reflects the coexistence of both front and back channels. On the other hand, only a single peak is apparent postmodification. This suggests the transition from full-depletion conduction type into volume inversion conduction.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface chemical modification induces nanometer scale electron confinement in field effect device