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Electron attachment to sulfur oxyhalides: , , , , and attachment rate coefficients, 300–900 K
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10.1063/1.3427527
/content/aip/journal/jcp/132/21/10.1063/1.3427527
http://aip.metastore.ingenta.com/content/aip/journal/jcp/132/21/10.1063/1.3427527

Figures

Image of FIG. 1.
FIG. 1.

Electron attachment rate coefficients for the sulfur oxyhalide compounds measured in the present work. Exponential (Arrhenius) fits are shown for , , , and . A power-law fit is shown for the data and capture rate coefficients (dot-dashed curve) calculated by the formula given in Ref. 37. The two different symbols for the data denote gas from old and new cylinders of supplied by two different manufacturers; the appear indistinguishable. The points for include one datum (solid triangle) obtained with a FALP apparatus at Holy Cross College at 300 K.

Image of FIG. 2.
FIG. 2.

Product branching fractions for electron attachment to .

Image of FIG. 3.
FIG. 3.

Product branching fractions for electron attachment to .

Image of FIG. 4.
FIG. 4.

Product branching fractions for electron attachment to .

Image of FIG. 5.
FIG. 5.

Partial rate coefficients for dihalide production in electron attachment to , , and .

Tables

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Table I.

G3 computational results for the (and fragments) neutrals and anions. Experimental EA includes uncertainty in final digits in parentheses. .

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Table II.

Average values of electron attachment rate coefficients at each temperature used with the FALP and HT-FALP apparatuses in the present work. The experimental uncertainty is ±30%.

Generic image for table
Table III.

VAE (energy difference between anion surface and neutral molecule at the neutral equilibrium geometry; energy difference includes zero point energy of the neutral molecule; a positive value indicates that the anion surface lies above the level of the neutral molecule) and Arrhenius activation energy .

Generic image for table
Table IV.

Production of dihalide anion in electron attachment at 400 K. Listed are the reaction enthalpies for dihalide production, product percentage, the partial rate coefficient for the dihalide product, the ground state S–Cl bond length, the ground state Cl–S–Cl or F–S–Cl bond angle, the ground state through-space distance between halides, and the frequency of the scissors mode for the ground state molecule.

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/content/aip/journal/jcp/132/21/10.1063/1.3427527
2010-06-01
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron attachment to sulfur oxyhalides: SOF2, SOCl2, SO2F2, SO2Cl2, and SO2FCl attachment rate coefficients, 300–900 K
http://aip.metastore.ingenta.com/content/aip/journal/jcp/132/21/10.1063/1.3427527
10.1063/1.3427527
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