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Voltage stress induced reversible diode behavior in pentacene thin films
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10.1063/1.4770003
/content/aip/journal/jcp/137/23/10.1063/1.4770003
http://aip.metastore.ingenta.com/content/aip/journal/jcp/137/23/10.1063/1.4770003
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current–voltage sweep for the 100 nm pentacence film after positive (△) and negative (▾) bias stress, measured at 75 °C. After positive bias stress, current flow under positive applied voltages increases, while after negative voltage stress, current flow under negative applied voltage increases. The diode-like behavior is reversed in direction, but comparable in magnitude.

Image of FIG. 2.
FIG. 2.

Conductance of the 100 nm pentacene film as a function of applied voltage after positive (a) and negative (b) bias stress. Measurements were taken at five temperatures between 30 °C and 75 °C. Although the conductance is relatively constant at high voltages, the system is clearly not Ohmic as the conductance is observed to change rapidly yet smoothly between −10 V and 10 V.

Image of FIG. 3.
FIG. 3.

The activation energy, calculated from the temperature dependence of the conductance data as G = G 0 exp(−E a/kT), is shown as a function of applied voltage for the pentacene film after positive (◯) and negative (●) bias stress. The activation energy varies over a range of 0.5 eV to 1.0 eV depending on the magnitude and polarity of the applied voltage as well as the direction of the bias stress.

Image of FIG. 4.
FIG. 4.

The Arrhenius prefactor, G 0, plotted against the activation energy, E a, after positive (◯) and negative (●) bias stress. The Meyer-Neldel rule is observed for both datasets. The Meyer-Neldel temperature, calculated from the linear regression of ln(G 0) vs E a, is 123 °C. The extrapolated conductance at the Meyer-Neldel temperature is 8.9 × 10−12 S.

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/content/aip/journal/jcp/137/23/10.1063/1.4770003
2012-12-17
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Voltage stress induced reversible diode behavior in pentacene thin films
http://aip.metastore.ingenta.com/content/aip/journal/jcp/137/23/10.1063/1.4770003
10.1063/1.4770003
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