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Epitaxial growth of graphene on 6H-silicon carbide substrate by simulated annealing method
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10.1063/1.4832043
/content/aip/journal/jcp/139/20/10.1063/1.4832043
http://aip.metastore.ingenta.com/content/aip/journal/jcp/139/20/10.1063/1.4832043
/content/aip/journal/jcp/139/20/10.1063/1.4832043
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/content/aip/journal/jcp/139/20/10.1063/1.4832043
2013-11-25
2014-07-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of graphene on 6H-silicon carbide substrate by simulated annealing method
http://aip.metastore.ingenta.com/content/aip/journal/jcp/139/20/10.1063/1.4832043
10.1063/1.4832043
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