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Communication: Non-radiative recombination via conical intersection at a semiconductor defect
5. S. Schuppler, S. L. Friedman, M. A. Marcus, D. L. Adler, Y. H. Xie, F. M. Ross, Y. J. Chabal, T. D. Harris, L. E. Brus, W. L. Brown, E. E. Chaban, P. F. Szajowski, S. B. Christman, and P. H. Citrin, Phys. Rev. B 52, 4910 (1995).
27. E. Luppi, E. Degoli, G. Cantele, S. Ossicini, R. Magri, D. Ninno, O. Bisi, O. Pulci, G. Onida, M. Gatti, A. Incze, and R. Del Sole, Opt. Mater. 27, 1008 (2005).
37. A. E. Jailaubekov, A. P. Willard, J. R. Tritsch, W. L. Chan, N. Sai, R. Gearba, L. G. Kaake, K. J. Williams, K. Leung, P. J. Rossky, and X. Y. Zhu, Nat. Mater. 12, 66 (2013).
45. H.-J. Werner
, P. J. Knowles
, G. Knizia
, F. R. Manby
, M. Schutz et al.
, MOLPRO, version 2010.1, a package of ab initio
, see http://www.molpro.net
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Localization of electronic excitations at molecule-sized semiconductor defects often precedes non-radiative (NR) decay, and it is known that many molecules undergo NR decay via conical intersection. Herein, we report the direct simulation of fast and efficient NR decay via a conical intersection at a known semiconductor defect. It is suggested that this silicon epoxide defect may selectively quench photoluminescence (PL) in small silicon nanocrystals (band gap > ∼2.8 eV), and thus influence both the observed PL yield and PL energy of oxidized silicon nanocrystals.
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