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1.
1.P. W. May, Science 319, 1490-1491 (2008).
http://dx.doi.org/10.1126/science.1154949
2.
2.P. W. May, Philos. Trans. R. Soc., A 358, 473-495 (2000).
http://dx.doi.org/10.1098/rsta.2000.0542
3.
3.D. G. Goodwin and J. E. Butler, in Handbook of Industrial Diamonds and Diamond Films, edited by M. A. Prelas, G. Popovici, and L. K. Bigelow (Marcel Dekker, New York, 1998).
4.
4.A. Cheesman, J. N. Harvey, and M. N. Ashfold, J. Phys. Chem. A 112, 11436-11448 (2008).
http://dx.doi.org/10.1021/jp8034538
5.
5.J. E. Butler and R. L. Woodin, Philos. Trans. R. Soc., A 342, 209-224 (1993).
http://dx.doi.org/10.1098/rsta.1993.0015
6.
6.S. J. Harris, Appl. Phys. Lett. 56, 2298 (1990).
http://dx.doi.org/10.1063/1.102946
7.
7.K. Larsson, Phys. Rev. B 56, 15452 (1997).
http://dx.doi.org/10.1103/PhysRevB.56.15452
8.
8.D. J. Poferl, N. C. Gardner, and J. C. Angus, J. Appl. Phys. 44, 1418 (1973).
http://dx.doi.org/10.1063/1.1662389
9.
9.R. E. Rawles, S. F. Komarov, R. Gat, W. G. Morris, J. B. Hudson, and M. P. D’Evelyn, Diamond Relat. Mater. 6, 791 (1997).
http://dx.doi.org/10.1016/S0925-9635(96)00623-1
10.
10.N. Lee and A. Badzian, Diamond Relat. Mater. 6, 130 (1997).
http://dx.doi.org/10.1016/S0925-9635(96)00698-X
11.
11.N. Lee and A. Badzian, Appl. Phys. Lett. 66, 2203 (1995).
http://dx.doi.org/10.1063/1.113947
12.
12.R. E. Stallcup II, Y. Mo, T. W. Scharf, and J. M. Perez, Diamond Relat. Mater. 16, 1727 (2007).
http://dx.doi.org/10.1016/j.diamond.2007.06.001
13.
13.M. Naamoun, A. Tallaire, F. Silva, J. Achard, P. Doppelt, and A. Gicquel, Phys. Status Solidi A 209, 1715 (2012).
http://dx.doi.org/10.1002/pssa.201200069
14.
14.H. Kawarada, H. Sasaki, and A. Sato, Phys. Rev. B 52, 11351 (1995).
http://dx.doi.org/10.1103/PhysRevB.52.11351
15.
15.P. W. May and Y. A. Mankelevich, J. Phys. Chem. C 112, 12432 (2008).
http://dx.doi.org/10.1021/jp803735a
16.
16.A. Netto and M. Frenklach, Diamond Relat. Mater. 14, 1630 (2005).
http://dx.doi.org/10.1016/j.diamond.2005.05.009
17.
17.P. W. May, N. L. Allan, J. C. Richley, M. N. R. Ashfold, and Y. A. Mankelevich, J. Phys.: Condens. Matter 21, 364203 (2009).
http://dx.doi.org/10.1088/0953-8984/21/36/364203
18.
18.P. W. May, N. L. Allan, M. N. R. Ashfold, J. C. Richley, and Y. A. Mankelevich, Diamond Relat. Mater. 19, 389 (2010).
http://dx.doi.org/10.1016/j.diamond.2009.10.030
19.
19.P. W. May, J. N. Harvey, N. L. Allan, J. C. Richley, and Y. A. Mankelevich, J. Appl. Phys. 108, 014905 (2010).
http://dx.doi.org/10.1063/1.3437647
20.
20.P. W. May, J. N. Harvey, N. L. Allan, J. C. Richley, and Y. A. Mankelevich, J. Appl. Phys. 108, 114909 (2010).
http://dx.doi.org/10.1063/1.3516498
21.
21.M. Grujicic and S. G. Lai, J. Mater. Sci. 34, 7 (1999).
http://dx.doi.org/10.1023/A:1004488818266
22.
22.M. Grujicic and S. G. Lai, J. Mater. Sci. 35, 5359 (2000).
http://dx.doi.org/10.1023/A:1004851029978
23.
23.M. Grujicic and S. G. Lai, J. Mater. Sci. 35, 5371 (2000).
http://dx.doi.org/10.1023/A:1004803114048
24.
24.J. C. Richley, “Fundamental studies of diamond chemical vapour deposition: Plasma diagnostics and computer modelling,” Ph.D. thesis (University of Bristol, UK, 2011) available online at: http://www.chm.bris.ac.uk/pt/diamond/jamesrthesis/James-Richley-thesis.pdf.
25.
25.J. Achard, F. Silva, O. Brinza, X. Bonnin, V. Milne, R. Issaoui, M. Kasu, and A. Gicquel, Phys. Status Solidi A 206, 1949 (2009).
http://dx.doi.org/10.1002/pssa.200982210
26.
26.J. C. Richley, J. N. Harvey, and M. N. R. Ashfold, in Diamond Electronics and Bioelectronics—Fundamentals to Applications III, MRS Symposia Proceedings Vol. 1203, edited byP. Bergonzo, J. E. Butler, R. B. Jackman, K. P. Loh, and M. Nesládek, (Materials Research Society, Pittsburgh, 2010), pp. J17-J32.
27.
27.A. Stukowski, Modell. Simul. Mater. Sci. Eng. 18, 015012 (2010), Ovito software available free from: http://www.ovito.org.
http://dx.doi.org/10.1088/0965-0393/18/1/015012
28.
28.P. W. May and Y. A. Mankelevich, Mater. Res. Soc. Symp. Proc. 1282 (2011).
http://dx.doi.org/10.1557/opl.2011.438
29.
29.S. Skokov, B. Weiner, and M. Frenklach, J. Phys. Chem. 98, 7073-7082 (1994).
http://dx.doi.org/10.1021/j100079a030
30.
30.C. C. Battaile, D. J. Srolovitz, I. I. Oleinik, D. G. Pettifor, A. P. Sutton, S. J. Harris, and J. E. Butler, J. Chem. Phys. 111, 4291-4299 (1999).
http://dx.doi.org/10.1063/1.479727
31.
31.W. J. Rodgers, “Multi-scale modelling of diamond grown via chemical vapour deposition,” Ph.D. thesis (University of Bristol, UK, 2014).
32.
32.J. C. Angus and J. W. Ponton, Surf. Sci. 61, 451 (1976).
http://dx.doi.org/10.1016/0039-6028(76)90058-3
33.
33.J. E. Butler and I. Oleynik, Philos. Trans. R. Soc., A 366, 295 (2008).
http://dx.doi.org/10.1098/rsta.2007.2152
34.
34.M. Naamoun, A. Tallaire, J. Achard, F. Silva, L. William, P. Doppelt, and A. Gicquel, Phys. Status Solidi A 210, 1985 (2013).
http://dx.doi.org/10.1002/pssa.201300071
35.
35.T. Teraji, S. Mitani, and T. Ito, Phys. Status Solidi A 198, 395 (2003).
http://dx.doi.org/10.1002/pssa.200306615
36.
36.Y. Mankelevich and P. W. May, personal communication (2015).
37.
37.J. C. Richley, J. N. Harvey, and M. N. R. Ashfold, J. Phys. Chem. A 113, 11416-11422 (2009).
http://dx.doi.org/10.1021/jp906065v
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/content/aip/journal/jcp/142/21/10.1063/1.4921540
2015-06-04
2016-12-06

Abstract

A three-dimensional kinetic Monte Carlo model has been developed to simulate the chemical vapor deposition of a diamond (100) surface under conditions used to grow single-crystal diamond (SCD), microcrystalline diamond (MCD), nanocrystalline diamond (NCD), and ultrananocrystalline diamond (UNCD) films. The model includes adsorption of CH ( = 0, 3) species, insertion of CH ( = 0-2) into surface dimer bonds, etching/desorption of both transient adsorbed species and lattice sidewalls, lattice incorporation, and surface migration but not defect formation or renucleation processes. A value of ∼200 kJ mol−1 for the activation Gibbs energy, Δ , for etching an adsorbed CH species reproduces the experimental growth rate accurately. SCD and MCD growths are dominated by migration and step-edge growth, whereas in NCD and UNCD growths, migration is less and species nucleate where they land. Etching of species from the lattice sidewalls has been modelled as a function of geometry and the number of bonded neighbors of each species. Choice of appropriate parameters for the relative decrease in etch rate as a function of number of neighbors allows flat-bottomed etch pits and/or sharp-pointed etch pits to be simulated, which resemble those seen when etching diamond in H or O atmospheres. Simulation of surface defects using unetchable, immobile species reproduces other observed growth phenomena, such as needles and hillocks. The critical nucleus for new layer growth is 2 adjacent surface carbons, irrespective of the growth regime. We conclude that twinning and formation of multiple grains rather than pristine single-crystals may be a result of misoriented growth islands merging, with each island forming a grain, rather than renucleation caused by an adsorbing defect species.

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