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Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell
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10.1063/1.4828359
/content/aip/journal/jrse/6/1/10.1063/1.4828359
http://aip.metastore.ingenta.com/content/aip/journal/jrse/6/1/10.1063/1.4828359
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Structure parameters used in the multiband k·p and drift-diffusion simulation for GaAs quantum well, GaAs Nanodsik, and GaAs Nanodisk array.

Image of FIG. 2.
FIG. 2.

Band edge profile for GaAs QD: (a) CB edge profile in plane, (b) HH band edge profile in plane, (c) CB edge profile in plane, (d) HH band edge profile in plane. The Fourier components used in the simulation are .

Image of FIG. 3.
FIG. 3.

Optical absorption and spontaneous emission spectrum for GaAs QW. (a) Band dispersion of GaAs QW (4 nm thickness) along direction. (b) Optical absorption spectra calculated under exciton model and single particle model. (c) Spontaneous emission spectra calculated under TE and TM different polarization modes. Three injected carrier concentrations were employed to fit the experimental results.

Image of FIG. 4.
FIG. 4.

Comparison of the simulated spontaneous emission spectrum with experimental PL results: (a) 4 nm/8 nm GaAs QWs, (b) GaAs QDs with height of 4 nm and 8 nm. Injection carrier concentration was varied to better fit the PL results.

Image of FIG. 5.
FIG. 5.

Device structure model (left) and Poison equation derived potential profile (right) for AlGaAs/GaAs/AlGaAs solar cell device.

Image of FIG. 6.
FIG. 6.

Band dispersion for GaAs QD array. The height of GaAs QD is 4 nm and the inter-distance between neighbouring QD is set as 3 nm. Only vertical coupling () was taken into account. A sketched band model is shown on the right side. Three optical absorption and recombination paths are also presented.

Image of FIG. 7.
FIG. 7.

Optical absorption coefficients for (a) VB to IB, (b) VB to CB, and (c) CB to IB transitions. We also calculated the continuous absorption from VB to (IB + CB), as shown in (d).

Image of FIG. 8.
FIG. 8.

Conversion efficiency contour map of IBSC calculated using the drift-diffusion model including the photofilling effect in IB. The contour plotted the relation by varying the energy separation between and .

Image of FIG. 9.
FIG. 9.

I-V curves for GaAs QD based IBSC under different concentrate ratio. It must be noticed that the current density on the -axis was normalised by the concentration ratio as: /. A clear nonlinear relation of is observed because the ratio of / is varying with different X.

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/content/aip/journal/jrse/6/1/10.1063/1.4828359
2013-11-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell
http://aip.metastore.ingenta.com/content/aip/journal/jrse/6/1/10.1063/1.4828359
10.1063/1.4828359
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