Structure parameters used in the multiband k·p and drift-diffusion simulation for GaAs quantum well, GaAs Nanodsik, and GaAs Nanodisk array.
Band edge profile for GaAs QD: (a) CB edge profile in yz plane, (b) HH band edge profile in yz plane, (c) CB edge profile in xy plane, (d) HH band edge profile in xy plane. The Fourier components used in the simulation are .
Optical absorption and spontaneous emission spectrum for GaAs QW. (a) Band dispersion of GaAs QW (4 nm thickness) along Kz direction. (b) Optical absorption spectra calculated under exciton model and single particle model. (c) Spontaneous emission spectra calculated under TE and TM different polarization modes. Three injected carrier concentrations were employed to fit the experimental results.
Comparison of the simulated spontaneous emission spectrum with experimental PL results: (a) 4 nm/8 nm GaAs QWs, (b) GaAs QDs with height of 4 nm and 8 nm. Injection carrier concentration was varied to better fit the PL results.
Device structure model (left) and Poison equation derived potential profile (right) for AlGaAs/GaAs/AlGaAs solar cell device.
Band dispersion for GaAs QD array. The height of GaAs QD is 4 nm and the inter-distance between neighbouring QD is set as 3 nm. Only vertical coupling (Kz ) was taken into account. A sketched band model is shown on the right side. Three optical absorption and recombination paths are also presented.
Optical absorption coefficients for (a) VB to IB, (b) VB to CB, and (c) CB to IB transitions. We also calculated the continuous absorption from VB to (IB + CB), as shown in (d).
Conversion efficiency contour map of IBSC calculated using the drift-diffusion model including the photofilling effect in IB. The contour plotted the relation by varying the energy separation between and .
I-V curves for GaAs QD based IBSC under different concentrate ratio. It must be noticed that the current density on the y-axis was normalised by the concentration ratio as: J/X. A clear nonlinear relation of is observed because the ratio of J/X is varying with different X.
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