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Modeling of nanoscale solar cells: The Green's function formalism
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10.1063/1.4828366
/content/aip/journal/jrse/6/1/10.1063/1.4828366
http://aip.metastore.ingenta.com/content/aip/journal/jrse/6/1/10.1063/1.4828366
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Nano-conductor (active region) connected to two semi-infinite electrodes assumed to be at the equilibrium with electrochemical potentials μ and μ, respectively, for left and right. The applied bias is defined as .

Image of FIG. 2.
FIG. 2.

Schematic representation of the considered conductor. This junction is assumed to be the active region of the solar cell.

Image of FIG. 3.
FIG. 3.

Current spectra (in arbitrary units) position along transport axis in conductor for  = 0 V. Valence and conduction band-edges are also shown (white lines).

Image of FIG. 4.
FIG. 4.

Like Fig. 3 with as the p-type material extremity. For the AlGaAs/GaAs heterojunction we took bands offset given by Δ = 0.3 eV and Δ = 0.19 eV.

Image of FIG. 5.
FIG. 5.

Current-density applied voltage and the corresponding generated power density calculated in the GaAs thin film solar cell with and without as the p-type material extremity.

Image of FIG. 6.
FIG. 6.

Like Fig. 3 with  = 0.95 V.

Image of FIG. 7.
FIG. 7.

Like Fig. 4 with  = 0.95 V.

Image of FIG. 8.
FIG. 8.

Current-density applied voltage and the corresponding generated power density calculated in the GaAs thin film solar cell with five 10 nm quantum wells separated by 2 nm thick barriers. These quantum wells are localized in the middle of the undoped part. For the GaAs/InGaAs heterojunction, we took bands offset given by Δ = 0.25 eV and Δ = 0.15 eV. To guide the eye we repeat the curves obtain without the quantum wells.

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/content/aip/journal/jrse/6/1/10.1063/1.4828366
2013-10-31
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modeling of nanoscale solar cells: The Green's function formalism
http://aip.metastore.ingenta.com/content/aip/journal/jrse/6/1/10.1063/1.4828366
10.1063/1.4828366
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