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Rear illumination monolithically integrated GaSb thermophotovoltaic devices grown on semi-insulating GaAs substrate
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10.1063/1.4828368
/content/aip/journal/jrse/6/1/10.1063/1.4828368
http://aip.metastore.ingenta.com/content/aip/journal/jrse/6/1/10.1063/1.4828368

Figures

Image of FIG. 1.
FIG. 1.

Black Body Radiated Power Density as a function of cut-off wavelength.

Image of FIG. 2.
FIG. 2.

Structure of GaSb TPV device layers grown on SI- GaAs substrate.

Image of FIG. 3.
FIG. 3.

Internal quantum efficiency as a function of wavelength for several values of BSR reflectance R.

Image of FIG. 4.
FIG. 4.

Bright and dark field Nomarski images of GaSb layers grown on GaAs substrate by IMF growth technique: (a) bright field image of a defect free region on the wafer, (b) and (c) correspond to regions exhibiting defects in the bright and dark field, respectively. The wafer areas in the micrographs (a)–(c) are approximately 2 × 2 cm2.

Image of FIG. 5.
FIG. 5.

(a) ω-2θ XRD scans showing GaAs and GaSb (004) peaks and (b) ω XRD scan of GaSb (004) peak.

Image of FIG. 6.
FIG. 6.

Reciprocal space map (RSM) of a typical GaSb/GaAs sample. The RSM is tilted 38.85°, which is indicative of 90° dislocation formation.

Image of FIG. 7.
FIG. 7.

AFM images of GaSb grown on SI GaAs substrates using IMF growth technique. The height information is indicated by (a). The edge detection image (b) provides insight into the hillock formation on the surface.

Image of FIG. 8.
FIG. 8.

Cross sectional (side) view of MIM device showing series interconnection of the PV cells.

Image of FIG. 9.
FIG. 9.

Bird's eye view of the MIM GaSb module.

Image of FIG. 10.
FIG. 10.

Photograph of the fully fabricated 6 GaSb/SI-GaAs MIM arrays showing the front side of the GaSb TPV cells.

Image of FIG. 11.
FIG. 11.

3D surface views of the MIMs array with device isolation trenches created by the selective wet etching of GaSb/GaAs.

Image of FIG. 12.
FIG. 12.

Dark I-V curve for typical interconnected PV cells in the MIM array. Three curves represent the experimentally measured data at room temperature, the best fitted curve using the diode I-V with ideality factor (n) = 2 and series resistance (R) = 30 Ω and the theoretical curve for ideal diode (n = 1).

Tables

Generic image for table
Table I.

Short circuit current density J, V, and maximum power density P as a function of BSR reflectance for black body radiation at 900 °C.

Generic image for table
Table II.

Key XRD characteristics for three samples. The very small differences in peak separation, FWHM, and φ indicate the reproducibility of the sample quality.

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/content/aip/journal/jrse/6/1/10.1063/1.4828368
2013-11-12
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rear illumination monolithically integrated GaSb thermophotovoltaic devices grown on semi-insulating GaAs substrate
http://aip.metastore.ingenta.com/content/aip/journal/jrse/6/1/10.1063/1.4828368
10.1063/1.4828368
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