Black Body Radiated Power Density as a function of cut-off wavelength.
Structure of GaSb TPV device layers grown on SI- GaAs substrate.
Internal quantum efficiency as a function of wavelength for several values of BSR reflectance R.
Bright and dark field Nomarski images of GaSb layers grown on GaAs substrate by IMF growth technique: (a) bright field image of a defect free region on the wafer, (b) and (c) correspond to regions exhibiting defects in the bright and dark field, respectively. The wafer areas in the micrographs (a)–(c) are approximately 2 × 2 cm2.
(a) ω-2θ XRD scans showing GaAs and GaSb (004) peaks and (b) ωrel XRD scan of GaSb (004) peak.
Reciprocal space map (RSM) of a typical GaSb/GaAs sample. The RSM is tilted 38.85°, which is indicative of 90° dislocation formation.
AFM images of GaSb grown on SI GaAs substrates using IMF growth technique. The height information is indicated by (a). The edge detection image (b) provides insight into the hillock formation on the surface.
Cross sectional (side) view of MIM device showing series interconnection of the PV cells.
Bird's eye view of the MIM GaSb module.
Photograph of the fully fabricated 6 GaSb/SI-GaAs MIM arrays showing the front side of the GaSb TPV cells.
3D surface views of the MIMs array with device isolation trenches created by the selective wet etching of GaSb/GaAs.
Dark I-V curve for typical interconnected PV cells in the MIM array. Three curves represent the experimentally measured data at room temperature, the best fitted curve using the diode I-V with ideality factor (n) = 2 and series resistance (Rs) = 30 Ω and the theoretical curve for ideal diode (n = 1).
Short circuit current density JSH, VOC, and maximum power density PMAX as a function of BSR reflectance for black body radiation at 900 °C.
Key XRD characteristics for three samples. The very small differences in peak separation, FWHM, and φ indicate the reproducibility of the sample quality.
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