1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Chalcogenide nanostructures: Topography, synthesis, properties, and applications
Rent:
Rent this article for
USD
10.1063/1.4862152
/content/aip/journal/jrse/6/1/10.1063/1.4862152
http://aip.metastore.ingenta.com/content/aip/journal/jrse/6/1/10.1063/1.4862152

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns for CdS nanostructures deposited on n-Si (100) annealed at 200, 400, 500, and 600 °C.

Image of FIG. 2.
FIG. 2.

AFM images for CdS nanostructures deposited on n-Si (100) annealed at (a) 200, (b) 400, (c) 500, and (d) 600 °C.

Image of FIG. 3.
FIG. 3.

(a) TGA and (b) DTA for CdS nanostructures in liquid form at cadmium nitrate and thiourea concentrations of 1.2 and 0.05 mol/l, respectively.

Image of FIG. 4.
FIG. 4.

(a) DSC and (b) FTIR for CdS nanostructures in liquid form at cadmium nitrate and thiourea concentrations of 1.2 and 0.05 mol/l, respectively.

Image of FIG. 5.
FIG. 5.

Absorption (a) and reflectance (b) spectra for CdS nanostructures deposited on n-Si (100) annealed at (a) 200, (b)400, (c) 500, and (d) 600 °C.

Image of FIG. 6.
FIG. 6.

Extinction coefficient (%) for CdS nanostructures deposited on n-Si (100) at (a) 200, (b) 400, (c) 500, and (d) 600 °C.

Image of FIG. 7.
FIG. 7.

PL spectra for CdS nanostructures deposited on n-Si (100) at (a) 200, (b) 400, (c) 500, and (d) 600 °C.

Image of FIG. 8.
FIG. 8.

I–V dark, ambient, and illumination conditions for Ag/CdS nanostructures deposited on n-Si (100) annealed at 200, 400, 500, and 600 °C.

Image of FIG. 9.
FIG. 9.

I–V dark, ambient, and illumination conditions (ln)/voltage for Ag/CdS nanostructures deposited on n-Si (100) annealed at 200, 400, 500, and 600 °C.

Image of FIG. 10.
FIG. 10.

Gain for Ag/CdS nanostructures deposited on n-Si (100) at (a) 200, (b) 400, (c) 500, and (d) 600 °C.

Tables

Generic image for table
Table I.

Grain size (), full-width half maximum, miller indices (hkl), interplanar distance (), lattice constants ( & ), strain (), dislocation density (), bulk modulus ( ), number of crystallites (), and thickness (t) of nanostructured CdS deposited on n-Si (100) at different annealing temperatures.

Generic image for table
Table II.

Band gap ( ), refractive index (), optical dielectric constant ( ), and extinction coefficient () of CdS nanostructures deposited on n-Si (100) at different annealing temperatures using Ravindra , 40 Herve and Vandamme, 41 and Ghosh 42 models.

Generic image for table
Table III.

Current (), saturated current ( ), ideality factor (), and barrier heights () under different conditions for CdS nanostructures deposited on n-Si (100) at different annealing temperatures.

Loading

Article metrics loading...

/content/aip/journal/jrse/6/1/10.1063/1.4862152
2014-01-14
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Chalcogenide nanostructures: Topography, synthesis, properties, and applications
http://aip.metastore.ingenta.com/content/aip/journal/jrse/6/1/10.1063/1.4862152
10.1063/1.4862152
SEARCH_EXPAND_ITEM