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A new modeling approach for graphene based silicon nanowire Schottky junction solar cells
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In this paper, a new approach to model the graphene-based silicon nanowires Schottky junction (SiNWs/G) solar cells taking into account Shockley-Read-Hall, Auger, radiative and surface recombinations is presented. The model results show that the performance of the SiNWs/G solar cells is much better than those of bulk Si/G counterpart solar cells. Then, a particular attention is paid to the effects of the number of graphene layers on the performance of the n- and p-type SiNWs/G solar cells. It is found that the performance of p-type SiNWs/G is more efficient than n-type SiNWs/G solar cell for the monolayer and bilayer graphene. Furthermore, the p-SiNWs/G solar cell parameters as functions of the temperature, doping concentration, and the SiNWs density and filling ratio are investigated. A comparison of our calculated results with published experimental data is shown to be in good agreement.
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