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Nonequilibrium plasmons and transport properties of a double-junction quantum wire
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10.1063/1.2400695
/content/aip/journal/ltp/32/12/10.1063/1.2400695
http://aip.metastore.ingenta.com/content/aip/journal/ltp/32/12/10.1063/1.2400695
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Model system. Two long wires are adiabatically connected to reservoirs, and a short wire is weakly coupled to the two leads. Tunneling resistances at junction points and are , and the junction capacitances are considered equal . The quantum dot is capacitively coupled to the gate electrode.

Image of FIG. 2.
FIG. 2.

The occupation probability as a function of the mode energy . The energy is an abbreviation for , the bias , the asymmetry parameter , and . Two analytic approximations, Eq. (26) (solid curve) and Eq. (B13) (dotted curve), are fitted to the probability distribution of the charge mode (circlets). The interaction parameter is (a) and 0.5 (b). In the inset the case of symmetric junctions is plotted with the same conditions.

Image of FIG. 3.
FIG. 3.

Average current as a function of the bias voltage and LL interaction parameter for (highly asymmetric junctions) with no plasmon relaxation (, solid lines) or with fast plasmon relaxation (, dashed lines). The bias voltage is normalized by the charging energy and the current is normalized by the current at with no plasmon relaxation for each . Other parameters are , .

Image of FIG. 4.
FIG. 4.

Fano factor as a function of the gate charge and LL interaction parameter for (highly asymmetric junctions) at .

Image of FIG. 5.
FIG. 5.

Fano factor as a function of the gate charge for symmetric junctions at voltage with no plasmon relaxation. Numerical results (solid lines) versus analytic results with three states, Eq. (41) (dashed lines) for , 0.5, and 1.0.

Image of FIG. 6.
FIG. 6.

Fano factor as a function of the gate charge and LL interaction parameter for (highly asymmetric junctions) at , with no plasmon relaxation (a) and with fast plasmon relaxation (b).

Image of FIG. 7.
FIG. 7.

Fano factor as a function of the bias and LL interaction parameter for (highly asymmetric junctions) at : with no plasmon relaxation (a) and with fast plasmon relaxation (b).

Image of FIG. 8.
FIG. 8.

Contour of Eq. (55). The arguments of are along the branch cuts , , , and , respectively.

Image of FIG. 9.
FIG. 9.

Probability with no plasmon relaxation during the time , where is the particle current at with no plasmon relaxation : for symmetric junctions (a) and for highly asymmetric junctions (b). Here , , and . The insets show a cross-sectional image of (solid line) as a function of and the reference distribution function in Eq. (63) (dashed line) (a) and the Poisson distribution in Eq. (65) (dashed line) (b), at (I), (II), and (III).

Image of FIG. 10.
FIG. 10.

The probability that electrons have passed through the right junction during the time , where is the particle current with no plasmon relaxation ; with no plasmon relaxation (a) and with fast plasmon relaxation (b). Here , , , and .

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/content/aip/journal/ltp/32/12/10.1063/1.2400695
2006-12-01
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonequilibrium plasmons and transport properties of a double-junction quantum wire
http://aip.metastore.ingenta.com/content/aip/journal/ltp/32/12/10.1063/1.2400695
10.1063/1.2400695
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