Photoresponse of device versus gate voltage at different device temperatures at . For the sake of clarity the curves are shifted along the vertical scale.
Photoresponse in -based device versus the gate voltage at three different frequencies of excitation (1.8, 2.5, and ) at (right axis). Curves are shifted along the vertical scale. Dashed lines indicate zero photoresponse at the corresponding frequency. Arrows indicate resonance positions. The calculated plasmon frequency as a function of the gate voltage for (threshold voltage) is shown by the dot-and-dash line (left axis). The error bars correspond to the linewidths of the experimental resonance peaks. (After Ref. 12).
Photoresponse in -based device versus the gate voltage at two different frequencies of excitation ( and ) at (left axis). Curves are shifted in the vertical scale. Solid lines indicate zero photoresponse at corresponding frequency. Arrows indicate resonance positions. Drain current versus the gate voltage at (right axis). (threshold voltage).
Photoconductive response versus gate voltage for different values of applied drain—source voltage from up to : , , at a fixed value of the external frequency of . For a typical nonresonant signal is observed. For higher values the resonant peak starts to grow and shifts to higher values of the gate voltage.
Photo-induced drain–source voltage as a function of gate bias for different external frequencies [GHz]: 679 , 473 at a fixed value of applied drain–source voltage of . At the lower frequency, the response is nonresonant. The resonance appears for the higher frequency .
Article metrics loading...
Full text loading...