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Two-dimensional electron systems in HgTe quantum wells
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10.1063/1.3064862
/content/aip/journal/ltp/35/1/10.1063/1.3064862
http://aip.metastore.ingenta.com/content/aip/journal/ltp/35/1/10.1063/1.3064862
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Diagram showing a schematic section through a structure with a HgTe quantum well.

Image of FIG. 2.
FIG. 2.

Band diagram of bulk HgTe and CdTe (a), and the energy levels in a HgTe quantum well with direct-gap (left) and inverted band structure (left) (b).

Image of FIG. 3.
FIG. 3.

Dependence of the gap between the valence and conduction bands in a HgTe quantum well on the well thickness. The inset shows the behavior of the electronlike and holelike bands upon variation of the quantum well thickness.

Image of FIG. 4.
FIG. 4.

Dispersion relation of 2D electrons and holes in a quantum well with a direct-gap band structure.

Image of FIG. 5.
FIG. 5.

Dispersion relation of 2D electrons and holes in a quantum well with inverted band structure.

Image of FIG. 6.
FIG. 6.

Spin splitting of the holelike conduction band and the electronlike in an asymmetric quantum well with inverted band structure .

Image of FIG. 7.
FIG. 7.

Cyclotron resonance photoconductance of 2D electron gas in (013) HgTe quantum wells with three different thicknesses: 8, 16, and . The inset shows the temperature dependence of the resistance for the 8- and quantum wells.

Image of FIG. 8.
FIG. 8.

Effective mass of 2D electrons in (013) HgTe quantum wells of different thicknesses for different electron densities. For the well with thickness the mass was determined from the temperature dependence of the Shubnikov oscillations. For the other wells the mass was measured from the position of the peak of the cyclotron resonance photoconductance.

Image of FIG. 10.
FIG. 10.

Spin splitting found from the beats of the SdH oscillations in Fig. 1.

Image of FIG. 11.
FIG. 11.

Diagonal and Hall components of the resistivity of a 2D electron gas in a HgTe quantum well of thickness .

Image of FIG. 12.
FIG. 12.

Diagonal component of the conductivity as a function of the Hall component .

Image of FIG. 13.
FIG. 13.

Diagonal and Hall components of the resistivity of the electron-hole system in a HgTe quantum well with light doping at . A diagram of a section through the grown structure is shown above.

Image of FIG. 14.
FIG. 14.

Experimental (—) and calculated (---) curves of and for the electron-hole system in a quantum well in magnetic fields up to in the temperature range .

Image of FIG. 15.
FIG. 15.

Proposed form of the dispersion relation of the electron-hole system in a HgTe quantum well.

Image of FIG. 16.
FIG. 16.

Experimental (—) and calculated (---) curves of and for the electron-hole system in a quantum well in magnetic fields up to in the temperature range after illumination.

Image of FIG. 17.
FIG. 17.

Experimental (—) and calculated (---) curves of and for the electron-hole system in an quantum well in magnetic fields up to at a temperature of .

Image of FIG. 9.
FIG. 9.

Shubnikov-de Haas oscillations for an asymmetrically doped HgTe quantum well of thickness . The arrows indicate beats.

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/content/aip/journal/ltp/35/1/10.1063/1.3064862
2009-01-01
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Two-dimensional electron systems in HgTe quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/ltp/35/1/10.1063/1.3064862
10.1063/1.3064862
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