1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Microwave-induced spin-flip scattering of electrons in point contacts
Rent:
Rent this article for
USD
10.1063/1.3671676
/content/aip/journal/ltp/37/11/10.1063/1.3671676
http://aip.metastore.ingenta.com/content/aip/journal/ltp/37/11/10.1063/1.3671676
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Diffusive point contact under irradiation in the presence of a static magnetic field H. A voltage bias V injects a spin polarized current from a ferromagnetic metal (1) with magnetic moment M into a normal metal (2). A spin-up electron is shown to move along a diffusive trajectory from metal 1 to metal 2 (solid line) where it resonantly interacts with the electromagnetic field, which results in a spin flip and the emission of a photon. Continuing along its diffusive path with spin down (dash line) the spin-dependent contact resistance implies that the radiation induced spin-flip contributes to a change of the magnetoresistance of the point contact.

Image of FIG. 2.
FIG. 2.

Zero-temperature energy distributions for (a) magnetic moment-up (spin-down), f p , and (b) magnetic moment-down (spinup) electrons, f p , at point r on the normal-metal side of the point contact. The inset (c) shows the Zeeman energy splitting and the direction of the magnetic field H. All states are occupied up to ɛ = ɛ f  − eV/2 − μ BH and ɛ = ɛ f  − eV/2 + μ BH, respectively (blue rectangles), but in the intervals (ɛ + eV) and (ɛ + eV) the states are only partly occupied (red rectangles) and to an extent that is determined by the probabilities α p (r) and α p (r) for “hot” electrons in the ferromagnet to reach r. Clearly, the difference between the densities of spin-down and spin-up electrons, n (r) −n(r)∝ depends on the bias voltage V. It follows that the spin population can be inverted, so that n (r) > n (r), for large enough V if

Image of FIG. 3.
FIG. 3.

Simplified point-contact geometry used for calculations (see text in Sec. II).

Image of FIG. 4.
FIG. 4.

Diffusive point contact under irradiation in the presence of a static magnetic field H. A voltage bias V injects a spin polarized current from a ferromagnetic metal with magnetic moment M 1 into a normal metal. A spin-up electron is shown to move along a diffusive trajectory from metal 1 to metal 2 (solid line) where it resonantly interacts with the electromagnetic field. This interaction results in a spin flip and the emission of a photon. Continuing along its diffusive path with spin down (dash line) the electron crosses the second interface and the spin-dependent contact resistance implies that the radiation induced spin-flip contributes to a change of the magnetoresistance of the point contact.

Image of FIG. 5.
FIG. 5.

Simplified geometry of the point contact with two interfaces used for calculations in Sec. IV B.

Loading

Article metrics loading...

/content/aip/journal/ltp/37/11/10.1063/1.3671676
2012-01-10
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microwave-induced spin-flip scattering of electrons in point contacts
http://aip.metastore.ingenta.com/content/aip/journal/ltp/37/11/10.1063/1.3671676
10.1063/1.3671676
SEARCH_EXPAND_ITEM