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Electrical resistivity of HTSC–normal metal interface
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10.1063/1.4791769
/content/aip/journal/ltp/39/2/10.1063/1.4791769
http://aip.metastore.ingenta.com/content/aip/journal/ltp/39/2/10.1063/1.4791769
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Distribution of free charge carriers in the contact layer of HTSC/Me interface (x is the distance from the interface into HTSC): 1—dependence of the concentration of electrons penetrated into HTSC from Me, 2—dependence ( is the hole concentration corresponding to the optimal doping) (a); phase diagram of HTSC: 5 TN is the Neele temperature, T * is the transition temperature into PG state (antiferromagnetic dielectric region is hatched) (b); schematic view of the dependence drc (x) in the layer of thickness dx → 0 at T > Tc : to the left of xAF are located the region with electronic conductance and the transition region to the AF dielectric layer; the region to the right of xAF includes the AF layer and the lightly doped metallic layers in the PG state (c).

Image of FIG. 2.
FIG. 2.

Dependences of R bulk(T) and rc (T)/rc (300 K) for Bi1/Pb interface (a). Dependences of R bulk(T)/R bulk(300 K) (curve 1) and rc (T)/rc (300 K) (curve 2) for Bi2/In interface. Curve 3 is the temperature dependence of drc /dT calculated from curve (2) (b).

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/content/aip/journal/ltp/39/2/10.1063/1.4791769
2013-02-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical resistivity of HTSC–normal metal interface
http://aip.metastore.ingenta.com/content/aip/journal/ltp/39/2/10.1063/1.4791769
10.1063/1.4791769
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