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Scanning-tunneling microscopy/spectroscopy and break-junction tunneling spectroscopy of FeSe1– x Te x
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View: Figures


Image of FIG. 1.
FIG. 1.

Dependence of the tunneling current I on the tip-sample distance zbetween PtIr tip and FeSe1– x Te x single crystal. The upper-right inset showsthe optical micrograph of the single crystal, while the lower left inset displays a histogram of the local work function (the barrier height).

Image of FIG. 2.
FIG. 2.

STM topography of FeSe1– x Te x for 0.5 < x < 1. T = 4.9 K, I = 0.3 nA, V = –0.4 V.

Image of FIG. 3.
FIG. 3.

Line profiles of the STM topography for FeSe0.3Te0.7 (a) and FeSe0.1Te0.9 (b). Dark spot ratio from STM versus Se content (1–x) from the electron-probe micro analyzer (EPMA) (c).

Image of FIG. 4.
FIG. 4.

The STM topography, the dI/dV mapping, and the dI/dV line profiles for FeSe0.3Te0.7 at 4.9 K.

Image of FIG. 5.
FIG. 5.

The dI/dV curves of FeSe0.5Te0.5 (a) at 4.2 K from break-junction tunneling spectroscopy (BJTS). The dI/dV fits using the broadened BCS density of states (dotted curves) (b) and (c).

Image of FIG. 6.
FIG. 6.

Temperature evolution of dI/dV for FeSe0.5Te0.5. The conductance curves are shifted up for clarity.

Image of FIG. 7.
FIG. 7.

The maximum gap structure observed in the measurements of FeSe1– x Te x (a). Peak-to-peak value of the superconducting gap 2Δ p–p versus Tc (K) for several superconductors 35,38,39 (b).

Image of FIG. 8.
FIG. 8.

The dI/dV curves for FeSe0.5Te0.5 obtained from STS (A, B) and BJTS (C, D) at T = 4–5 K (a), and STS at 77 K (b).

Image of FIG. 9.
FIG. 9.

Line profiles of dI/dV for FeSe0.5Te0.5 measured by STS at 4.9 K, showing the peak at −300 mV (a) and +100 mV (b). The profiles of (a) and (b) were taken from different samples.

Image of FIG. 10.
FIG. 10.

Line profile of dI/dV from STS for FeS0.1Te0.9 at 4.9 K.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scanning-tunneling microscopy/spectroscopy and break-junction tunneling spectroscopy of FeSe1–xTex