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The effect of infrared radiation on quantum magnetotransport in n-InGaAs/GaAs with two strongly coupled quantum wells
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10.1063/1.4803176
/content/aip/journal/ltp/39/4/10.1063/1.4803176
http://aip.metastore.ingenta.com/content/aip/journal/ltp/39/4/10.1063/1.4803176
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The temperature dependence of electroresistivity in a zero magnetic field for a InGaAs/GaAs sample with the initial concentration (□), after intermediate exposure (△), and after the maximum exposure (○).

Image of FIG. 2.
FIG. 2.

Dependences ρ xx  (B, T) and ρ xy  (B, T) in a perpendicular magnetic field at temperatures T = 0.05–60 K. The curves ρ xx  (B, T) are divided into groups by temperature intervals: solid lines are for T ≤ 8 K, dashed lines are for T > 8 K. Arrows indicate the direction of change of ρ xx with increasing temperature.

Image of FIG. 3.
FIG. 3.

Dependences σ xx (B, T) and σ xy (B, T) in a perpendicular magnetic field at temperatures T = 0.05–60 K.

Image of FIG. 4.
FIG. 4.

Dependences Rx x (B, T) and Rxy (B, T) in a perpendicular magnetic field at T = 0.05 K for the dark sample (black lines) and the sample after maximum exposure (gray lines).

Image of FIG. 5.
FIG. 5.

The temperature dependences of the electron density for the sample after maximum exposure: total concentration (□), the concentration in the first well (○), the concentration in the second well (∇), different shades represent data from different series of experiments.

Image of FIG. 6.
FIG. 6.

Temperature dependences of electron mobility for the sample after maximum exposure (notation same as in Fig. 5 ).

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/content/aip/journal/ltp/39/4/10.1063/1.4803176
2013-04-26
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of infrared radiation on quantum magnetotransport in n-InGaAs/GaAs with two strongly coupled quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/ltp/39/4/10.1063/1.4803176
10.1063/1.4803176
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