The temperature dependence of electroresistivity in a zero magnetic field for a InGaAs/GaAs sample with the initial concentration (□), after intermediate exposure (△), and after the maximum exposure (○).
Dependences ρ xx (B, T) and ρ xy (B, T) in a perpendicular magnetic field at temperatures T = 0.05–60 K. The curves ρ xx (B, T) are divided into groups by temperature intervals: solid lines are for T ≤ 8 K, dashed lines are for T > 8 K. Arrows indicate the direction of change of ρ xx with increasing temperature.
Dependences σ xx (B, T) and σ xy (B, T) in a perpendicular magnetic field at temperatures T = 0.05–60 K.
Dependences Rx x (B, T) and Rxy (B, T) in a perpendicular magnetic field at T = 0.05 K for the dark sample (black lines) and the sample after maximum exposure (gray lines).
The temperature dependences of the electron density for the sample after maximum exposure: total concentration (□), the concentration in the first well (○), the concentration in the second well (∇), different shades represent data from different series of experiments.
Temperature dependences of electron mobility for the sample after maximum exposure (notation same as in Fig. 5 ).
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