The Mod VI OAUGDP® reactor operating in air at 1 atm of pressure.
Mod VI OAUGDP® reactor. (a) Plan view from top. (b) Elevation view from front, with remote exposure platform in plenum on left, and elevation view from the side.
Change in water contact angle of meltblown polypropylene (PP) fabric after (a,b) and before (c) exposure to a helium OAUGDP® plasma at , gap distance . (a) 30 s exposure @ ; (b) 30 s exposure @ ; and (c) unexposed control.
The surface energy as a function of the duration of direct exposure to an air OAUGDP®, and the aging effect for selected times after exposure for meltblown (MB) PP fabric.
Scanning electron micrographs (SEMs) of PP fibers. (a) Untreated and (b) fibers exposed for several minutes to an OAUGDP® plasma. Note 3 μm fiduciary scale at the lower right.
Characteristic survival curve for a polypropylene sample containing E. coli cells directly exposed for the times shown to an air plasma in the OAUGDP® reactor at conditions 10 kV rms and 7 kHz.
Scanning electron micrograph images of E. coli (a) before and (b) after 30 s exposure to the OAUGDP® operating at 10 kV rms and 7.1 kHz.
Schematic of the Mod V OAUGDP® remote exposure reactor with recirculating gas flow capability.
Portable backpack decontamination wand based on OAUGDP® active species generated by panels or between parallel plates.
Three-dimensional schematic of the sterilizable OAUGDP® air filter that received a 2002 R&D 100 award.
Early survival curve data of Staphylococcus aureus and the viral bacteriophage Phi X 174 exposed to the OAUGDP® active species on the sterilizable filter for the times on the abscissa.
Schematic of diesel soot filter based on oxidation of soot in the engine exhaust by active species from an annular OAUGDP®.
Pressure drop across filter with OAUGDP® off and on. The concentration of volatile organic compounds (VOCs) was monitored and decreases when the OAUGDP® is energized.
Two parallel wires wound on a 5 cm diameter PVC cylinder.
Cylindrical plasma operating in helium gas at one atmosphere. (a) No phosphors on surface; (b) with fluorescent phosphors on surface.
Isometric contour plot of etching depth across a uniform coating of photoresist on a 20 cm diameter silicon wafer (outer circle) directly exposed to an air OAUGDP® 15 cm in diameter for 5 min. Wafer and topographic analysis courtesy of Eaton Corporation.
Scanning electron micrograph images of photoresist etched for 5 min by OAUGDP® air plasma. Lineations were produced by gas flow across wafer. SEM images courtesy of the Eaton Corporation. (a) Large scale topography. (b) Small scale topography.
Scanning electron micrograph of PET directly exposed to an air OAUGDP® for 5 min, under operating conditions 5 kHz and 12 kV rms. Note the submicron spires under titanium dioxide grains.
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