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Measurement of rotational temperature using emission spectrum in plasmas
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View: Figures


Image of FIG. 1.
FIG. 1.

Schematic illustration of the PECVD setup and optical instruments for plasma analysis.

Image of FIG. 2.
FIG. 2.

The synthetic spectrum for various at (top) and various at (bottom).

Image of FIG. 3.
FIG. 3.

obtained by the comparison between the experimental result (-○-) and the synthetic spectrum (−) of SiH (0,0) band is 805 K.

Image of FIG. 4.
FIG. 4.

(a) As the input power is increased, is also increased from 765 to 865 K at 2 Torr and 400 W, but (b) shows lower value at higher total gas flow rates because of gas cooling effects. In all cases of pressures, 2–8 Torr, the similar effects of input power and total gas flow rates are observed.

Image of FIG. 5.
FIG. 5.

(a) Gas pressure effects on for various gas ratios (denoted as ) and (b) for various total gas flow rate at 400 W. Increasing gas pressure, was decreased by frequent collisions between electron and neutrals.

Image of FIG. 6.
FIG. 6.

Emission intensity ratio Si/SiH, which gives the information about electron temperature (Ref. 10), decreased as increasing gas pressure and total gas flow rate.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Measurement of rotational temperature using SiH(A2Δ-X2Π) emission spectrum in SiH4–H2 plasmas