Schematic illustration of the PECVD setup and optical instruments for plasma analysis.
The synthetic spectrum for various at (top) and various at (bottom).
obtained by the comparison between the experimental result (-○-) and the synthetic spectrum (−) of SiH (0,0) band is 805 K.
(a) As the input power is increased, is also increased from 765 to 865 K at 2 Torr and 400 W, but (b) shows lower value at higher total gas flow rates because of gas cooling effects. In all cases of pressures, 2–8 Torr, the similar effects of input power and total gas flow rates are observed.
(a) Gas pressure effects on for various gas ratios (denoted as ) and (b) for various total gas flow rate at 400 W. Increasing gas pressure, was decreased by frequent collisions between electron and neutrals.
Emission intensity ratio Si/SiH, which gives the information about electron temperature (Ref. 10), decreased as increasing gas pressure and total gas flow rate.
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