SEM images of (a) wet- and (b) dry-textured Si surfaces produced in our laboratory at Plasma Sources and Application Center, Singapore. More details about the fabrication process of the textured Si surfaces can be found elsewhere. 34–42
The schematic diagram of the array of Si microcones used in the simulations.
The accumulated electric charge on the Si cones.
Displacement and velocity of a typical ion for both the textured surface at the bias of (a) and (b), (c) and (d), and the flat surface at the bias of (e) and (f).
The relative ion distribution over the lateral surfaces of the Si cones.
A 3D image of the ion coverage over the simulated micro-textured surface.
A 3D image of the ion coverage over the flat Si surface.
The ion number density of different segments along the lateral surface of the Si cones.
The simulation parameters.
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