(a) Dielectric loaded multi-beam traveling wave amplifier with AlN absorbers (top and bottom), (b) electric field (Ez) distribution of the first three modes of the circuit at the plane denoted in Fig. 1(a) (the green-colored box in the dashed line of Fig. 1(a) is the area for the field plots of Fig. 1(b) ), (c) dispersion curves of three slow wave modes (TM11, TM21, and TM31) and 10 kV beam line.
Transmission of the TM11, TM21, and TM31 modes in an overmoded double grating waveguide (a) without and (b) with implanting AlN absorbers.
(a) Quality factor (Q 0) and (b) cavity impedance (R/Q) versus frequency of the unit cell for L = 1 mm.
(a) Pierce impedance (K m), (b) gain growth/beam, (c) gain/beam vs. frequency of the unit cell for L = 1 mm
PIC simulation result (electron energy distribution) of the designed circuit with l c = 7 cm. The electron bunching in the 2nd beam is anti-phased (phase difference = 180°) with that of the 1st and 3rd beams.
(a) Gain versus time graph, calculated from PIC simulation at 71 GHz input driving frequency. Gain versus frequency graphs from theory and simulations (simulation-I: I b = 50 mA, simulation-II: I b = 150 mA) (b) without loss (d 0 = 0) and (c) with loss (d 0 = 1).
(a) Input port signal with zero driving signal and (b) fast Fourier transformed (FFTed) input port spectrum (c) output port signal with no driving signal and (d) FFTed output port spectrum.
Article metrics loading...
Full text loading...