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GaAs p‐n Junction Diodes for Wide Range Thermometry
1.H. Harris, Sci. Am. 204, No. 6, 192 (1961).
2.A. G. McNamara, Rev. Sci. Instr. 33, 330 (1962).
3.L. E. Barton, Electronics 35, 38 (4 May 1962).
4.C. T. Sah, R. N. Noyce, and W. Shockley, Proc. I.R.E. 45, 1228 (1957).
5.J. M. Whelan, Semiconductors (Reinhold Publishing Corporation, New York, 1959), edited by N. B. Hannay, Chap. IX.
6.We have observed on silicon and germanium diode thermometers as much as 10 °K shift in indicated temperature when placed in a field of 6000 G.
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