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Field ionization device used for measuring the pulse height defect of He+ in silicon
1.E. W. Müller and T. T. Tsong, Field Ion Microscopy (Elsevier, New York, 1969).
2.H. D. Beckey, Field Ionization Mass Spectrometry (Pergamon, Oxford, 1971).
3.W. D. Johnston and J. G. King, Rev. Sci. Instrum. 37, 475 (1966).
4.K. C. Hsieh, C. C. Curtis, and C. Y. Fan, 13th Int. Conf. on Cosmic Rays, Conf. Papers, No. 4, 1973, p. 2954.
5.C. C. Curtis, K. C. Hsieh, C. Y. Fan, and L. W. Swanson, 14th Int. Conf. on Cosmic Rays. Conf. Papers, No. 9, 1975, p. 3410.
6.K. C. Hsieh, Nucl. Instrum. Meth. 138, 677 (1976).
7.R. Gomer, Field Emission and Field Ionization (Harvard U.P., Cambridge, 1961).
8.L. C. Northcliffe and R. F. Schilling, Nucl. Data Tables A 7, 233 (1970).
9.T. Sakuri and E. W. Müller, Phys. Rev. Lett. 30, 532 (1973).
10.L. Lindhard, M. Scharff, and H. E. Schiøtt, K. Dan. Vidensk. Selsk. Mat. Fys. Medd 33, 14 (1963).
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