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Accurate measurements of high pressure resistivity in a diamond anvil cell
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Image of FIG. 1.
FIG. 1.

Configuration of a microcircuit on a diamond anvil. (1) The exposed Mo electrodes; (2) the layer on the Mo electrode; (3) the exposed diamond anvil.

Image of FIG. 2.
FIG. 2.

Pressure dependence of the sample thickness.

Image of FIG. 3.
FIG. 3.

Pressure dependence of nanocrystalline ZnS electrical resistivity.

Image of FIG. 4.
FIG. 4.

Pressure distribution in the sample cell of a modified DAC at different pressures. The zero point represents the center point of the sample cell.

Image of FIG. 5.
FIG. 5.

characteristics of nanocrystalline ZnS sample in our designed DAC under different pressures.

Image of FIG. 6.
FIG. 6.

Comparison of the resistivity by finite element analysis and formula (1).

Image of FIG. 7.
FIG. 7.

(Color online) Finite element analysis of electric current density distribution at the sample section. (a) Built model. (b) Entity meshed with elements. (c) Diagrammatic sketch of the sample section. (d) Sectional distributions at 2.6 GPa, (e) 18.8 GPa, and (f) 30.8 GPa. The rectangular region enveloped by the dashed line and marked as is the area used in formula (1).


Generic image for table
Table I.

Comparison of calculated resistivities using, e.g., 1 and FEA .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Accurate measurements of high pressure resistivity in a diamond anvil cell