Schematic drawing of two different types of crystals used in the experiment: a strip (left) and a quasimosaic crystal (right) installed on the corresponding holders which impart the required bending.
Block diagram of the H8-RD22 experimental setup (not to scale). Not described in the text are M1 and M2, bending magnets already present in the H8 beamline and with no specific function for the experiment.
Picture of several AMS double sided silicon sensors, grouped together to form a “ladder” with a common bias voltage and readout.
Residual distribution of position measurements for one of the AMS silicon detectors.
Residual distribution of position measurements for the AGILE detectors.
Beam profile measured with the parallel plate chamber and QM3 crystal in channeling position ( is mm, is events). Results of the fit with three Gaussians describing channeled (right peak), nonchanneled (left peak) and dechanneled (area between peaks) fractions are also presented on the plot .
Residuals of the downstream AMS detector, with respect to the upstream one, from which a beam divergence of can be extracted (see text for details).
Beam intensity as a function of the crystal orientation angle (vertical axis) and of the measured beam deflection (horizontal axis) for ST1 strip crystal. The channeling peak (2) and the large volume reflection region (4) are clearly visible.
Article metrics loading...
Full text loading...