(a) Setup of the grating interferometer with the source grating , phase grating , and analyzer grating . (b) Top view of the layout denoting the geometrical setup parameters.
Fabrication of the source grating . [(a)–(c)] Fabrication steps. (d) A photograph of a section of the processed wafer showing the Gd lines (black). (e) Profilometer scan over two grating periods denoting a structure height of consisting of resist layer and the Gd absorption layer with a DC of 0.4.
Fabrication of the phase grating . [(a)–(c)] Fabrication steps. (d) Cross section SEM image of the processed grating. The DC of 0.5 is properly achieved for the grating depth of .
Fabrication of the absorption grating by an inclined sidewall evaporation process. (a) Schematic view. (b) Cross section of a SEM image showing the high Gd structures with a DC of 0.25.
Characterization of the gratings. (a) Depiction of the intensity modulation for one detector pixel when one of the gratings is scanned along and the corresponding Fourier series coefficients , , and (see text). (b) Neutron data of the intensity modulation for a single detector pixel and the corresponding cosine function obtained from the extracted Fourier coefficients. (c) Visibility map over the whole grating area of showing the values of for each detector pixel with in an averaged value of 23%.
Fabrication parameters of the diffraction gratings.
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