(a) Reflection and (b) transmission microstrip line resonators. The coupling and transmission gaps are engineered differently to optimize device performance.
as a function of frequency for different coupling gaps between the feed line and the central line of a microstrip resonator.
(a) Reflection and transmission parameters of transmission resonators with several transmission gaps. The color-coded sketches on the right represent the magnitude (in A/m) of the current density in the device at resonance. (b) Measured response of a resonator fabricated on GaAs.
(a) Sketch of an EPR/HEM integrated sensor. (b) Photograph of the device placed in a low temperature housing box. (c) Optical micrograph of the center part of the resonator. The cross-shaped HEM can be seen underneath the resonator. The green pyramidal-shaped sample is a single crystal of a SMM.
(a) Black curve: Magnetization response of the SMM crystal at as a function of easy axis magnetic field (a constant transverse field of is also applied). Red curve: The magnetization under microwave excitation applied to the sample. (b) Microwave power absorbed, extracted from the signal transmitted through the resonator, . (c) Microwave-induced change of magnetization extracted from (a).
(a) Time-resolved magnetization measurements for three different applied longitudinal fields under microwave pulse irradiation. (b) Magnetization curves at six different times, during and after the microwave pulse. The dashed line indicates the resonant field corresponding to the transition between the two lowest-lying tunnel split spin states.
Article metrics loading...
Full text loading...