A Schematic of (a) the developed SHPM system and (b) the details of the scanning stage.
A schematic view of the active area of a Si-MOSFET Hall probe.
A schematic cross section of a thermally oxidized silicon substrate; (a) the initial condition, (b) the first photolithography patterning for a source, a drain and a Hall electrode, (c) etching by both RIE and HF acid, (d) photoresist lift-off, (e) phosphorus (P) ion doping to produce a -type inversion layer under the patterned area, (f) second photolithography patterning for a gate electrode, which corresponds to the Hall cross area, followed by -layer etching by HF acid, (g) gate oxide layer formation under the Hall cross, (h) fabrication of contact holes by the third photolithography and RIE, and (i) Al-electrode fabrication by using the final photolithography and phosphoric acid etching.
Optical micrographs of (a) the whole Si-MOSFET micro-Hall probe on the scanning printed circuit board, and the Si-MOSFET micro-Hall probe with the Hall-cross sizes of (b) and (c) .
Hall voltages of the Si-MOSFET micro-Hall probes with the Hall-cross sizes of (a) and (b) as a function of the external magnetic field. (c) Hall coefficient of the micro-Hall probe with the Hall-cross size of as a function of the gate voltage.
Stray-field images taken with increasing the applied magnetic field from (a) , (b) 0.0 up to (c) , and also with decreasing the field from (d) , (e) 0.0 down to (f).
Measured stray fields in the scanned area of in the film as a function of the external magnetic field.
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