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Proximity detector circuits: An alternative to tunnel diode oscillators for contactless measurements in pulsed magnetic field environments
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10.1063/1.3152219
/content/aip/journal/rsi/80/6/10.1063/1.3152219
http://aip.metastore.ingenta.com/content/aip/journal/rsi/80/6/10.1063/1.3152219
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A BD-5 tunnel diode (manufactured by GPD Optoelectronics Corp.) characteristic curve. The vertical dashed lines indicate the possible minimum and maxim operating bias voltage with . The inset shows a schematic diagram of the TDO circuit at low temperature8 where the parameters shown are typical for a BD-3 tunnel diode (manufactured by Aeroflex-Metelics Corp.) operating at 150 MHz.

Image of FIG. 2.
FIG. 2.

A schematic diagram of the PDO circuit connected between the measurement coil and the rf signal processing stage. The coupling inductor and signal inductor are around 0.2 and , respectively. The contribution from the connecting coax is estimated to be and . This circuit operates at 28 MHz.

Image of FIG. 3.
FIG. 3.

Critical magnetic field behavior of a single crystal of the anisotropic superconductor at different temperatures from 18 to 31 K. Left axis: frequency shift as a function of magnetic field applied along the crystallographic -axis for configuration I. Right axis:frequency shift as a function of magnetic field applied perpendicular to the crystallographic -axis for configuration II). The inset shows the pulsed field profile as a function of time.

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/content/aip/journal/rsi/80/6/10.1063/1.3152219
2009-06-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Proximity detector circuits: An alternative to tunnel diode oscillators for contactless measurements in pulsed magnetic field environments
http://aip.metastore.ingenta.com/content/aip/journal/rsi/80/6/10.1063/1.3152219
10.1063/1.3152219
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