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Fast-switching system for injection seeding of a high-power Ti:sapphire laser
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View: Figures


Image of FIG. 1.
FIG. 1.

Water vapor absorption lines at 820 nm, dotted lines: suitable for vertical sounding; dashed lines: suitable for measurements in horizontal direction.

Image of FIG. 2.
FIG. 2.

Schematic structure of an ECDL in Littman–Metcalf configuration, the first order diffraction of the diode laser beam from a grating is reflected back into the diode by means of a retroreflector.

Image of FIG. 3.
FIG. 3.

The injection seeder setup, FC, precision fiber coupler, XCOF, OMP, and DAQ.

Image of FIG. 4.
FIG. 4.

Characteristics of diode lasers from Sacher Lasertechnik; (a) The input/output at 820 nm and (b) output power as function of wavelength (when tuned with the motor drive).

Image of FIG. 5.
FIG. 5.

Response time behavior of OMP1 (bottom) to trigger signals (top) of frequency: (a) 250 and (b) 500 Hz.

Image of FIG. 6.
FIG. 6.

Characteristics of OMP2, (a) response time behavior for inputs to channels 1 and 2 and (b) crosstalk between channels 1 and 2 when channel 2 is on by the trigger signal.

Image of FIG. 7.
FIG. 7.

Typical stability behavior of the diode lasers during more than 180 min of operation of the seeder, laser1 to laser2 to .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fast-switching system for injection seeding of a high-power Ti:sapphire laser