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Electrochemical differential photoacoustic cell to study in situ the growing process of porous materials
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10.1063/1.3271238
/content/aip/journal/rsi/81/1/10.1063/1.3271238
http://aip.metastore.ingenta.com/content/aip/journal/rsi/81/1/10.1063/1.3271238

Figures

Image of FIG. 1.
FIG. 1.

(a) Front view of the DPC without laser contact. (b) Schematic diagram of the experimental setup of the DPC for the PS growth.

Image of FIG. 2.
FIG. 2.

(a) shows a comparison between DSC signal and DPC for endothermic transition of pure Ga taken as reference and (b) and (c) show the PA amplitude and phase signal for both cells as a function of the time.

Image of FIG. 3.
FIG. 3.

PA amplitude [(a) and (b)] and phase [(c) and (d)] signals for two samples (O3 and O3D) and reference samples of the wafer O3 as a function of the time; (↑): applied voltage on; (↓): applied voltage off. Dashed vertical lines were included to guide the eye. The applied voltage was 10 V.

Image of FIG. 4.
FIG. 4.

PA amplitude [part (i)] and phase [part (ii)] signals for three samples and reference samples of three porous silicon samples as a function of the time: (a) Sample O1, (b) sample O4, and (c) sample O5. In part (iii) the current curve as a function of the time has been added. Arrows indicate the moment of turn-on and turn-off the voltage [(↑): applied voltage on; (↓): applied voltage off], and the dashed vertical lines were included to guide the eye. The applied voltage was 10 V.

Image of FIG. 5.
FIG. 5.

Raman spectra of the porous silicon samples. The inset in this figure corresponds to the Raman peak of silicon.

Image of FIG. 6.
FIG. 6.

X-ray diffraction patterns of two porous silicon samples produced. (a) Sample O3 and (b) sample O5.

Image of FIG. 7.
FIG. 7.

SEMs of two of the porous silicon samples for -type (100) silicon electrodes anodized potentiostatically in ethanoic HF. (a) Sample O1 and (b) sample O4.

Tables

Generic image for table
Table I.

Nominal resistivity and thickness values for the -type silicon wafers used as substrates to produce the porous silicon samples.

Generic image for table
Table II.

Crystallite sizes of the porous silicon samples produced on different substrates determined by fitting Raman spectra by means of the phonon confinement model.

Generic image for table
Table III.

Crystallite sizes of the porous silicon samples produced on different substrates determined using the Scherrer formula for the x-ray diffraction patterns.

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/content/aip/journal/rsi/81/1/10.1063/1.3271238
2010-01-12
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrochemical differential photoacoustic cell to study in situ the growing process of porous materials
http://aip.metastore.ingenta.com/content/aip/journal/rsi/81/1/10.1063/1.3271238
10.1063/1.3271238
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