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In situ impedance measurements in diamond anvil cell under high pressure
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10.1063/1.3282444
/content/aip/journal/rsi/81/1/10.1063/1.3282444
http://aip.metastore.ingenta.com/content/aip/journal/rsi/81/1/10.1063/1.3282444
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Manufacturing process on a diamond anvil. (a) A clean diamond anvil. (b) A Mo thin film was sputtered on a diamond anvil. (c) The coated Mo thin film was overlaid with the designed electrode. (d) An layer was sputtered after (c). (e) Some parts of the layer were removed to allow required exposure. The 1 is Mo, 2 is the alumina layer on diamond, 3 is the alumina layer on the Mo electrode, and 4 is the exposed diamond. (f) Photograph of the electrode corresponding with (e).

Image of FIG. 2.
FIG. 2.

The cross section of the designed DAC device.

Image of FIG. 3.
FIG. 3.

The impedance of (a) sample chamber and (b) connecting wires.

Image of FIG. 4.
FIG. 4.

Impedance of nanocrystalline ZnS under different pressure.

Image of FIG. 5.
FIG. 5.

Imaginary parts of the specific modulus function vs frequency.

Image of FIG. 6.
FIG. 6.

Variation in relative permittivity of nanocrystalline ZnS under pressure.

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/content/aip/journal/rsi/81/1/10.1063/1.3282444
2010-01-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ impedance measurements in diamond anvil cell under high pressure
http://aip.metastore.ingenta.com/content/aip/journal/rsi/81/1/10.1063/1.3282444
10.1063/1.3282444
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