Manufacturing process on a diamond anvil. (a) A clean diamond anvil. (b) A Mo thin film was sputtered on a diamond anvil. (c) The coated Mo thin film was overlaid with the designed electrode. (d) An layer was sputtered after (c). (e) Some parts of the layer were removed to allow required exposure. The 1 is Mo, 2 is the alumina layer on diamond, 3 is the alumina layer on the Mo electrode, and 4 is the exposed diamond. (f) Photograph of the electrode corresponding with (e).
The cross section of the designed DAC device.
The impedance of (a) sample chamber and (b) connecting wires.
Impedance of nanocrystalline ZnS under different pressure.
Imaginary parts of the specific modulus function vs frequency.
Variation in relative permittivity of nanocrystalline ZnS under pressure.
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