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Circularly polarized luminescence microscopy for the imaging of charge and spin diffusion in semiconductors
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) A photograph of the modified Optiphot 70 showing the plates at the excitation and the reception. (b) Schematic diagram of the circularly polarized luminescence microscope. The laser is shown as a thick line (red, color online), while the luminescence is shown as thin lines (dark red, color online).

Image of FIG. 2.
FIG. 2.

Sum (open circles) and difference (closed circles) spectra obtained on the passivated sample at the center of the PL images. The inset shows a white light image of the GaAs patch with the laser spot close to the center.

Image of FIG. 3.
FIG. 3.

The sum (a) and difference (b) images obtained on the passivated sample by applying Eqs. (1) and (2). (c) The angular average profile of plotted against (open circles). The solid line is obtained by convolving the excitation function with a Bessel function with . (d) is obtained by fitting the angular averaged profile of (open circles) with a numerical solution of Eq. (3b) with . In both cases, the laser excitation profile (dotted lines) is smaller than the luminescence profile and so does not limit the measurement of and .

Image of FIG. 4.
FIG. 4.

(a) Open circles: angular averaged profile of obtained on the naturally oxidized sample. Solid line: numerical resolution of Eq. (3a) with and . Closed circles: numerical resolution for and . (b) shows the same three curves for with and . In both cases, the lateral extent of the laser (dotted lines) is smaller than that of the luminescence profile.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Circularly polarized luminescence microscopy for the imaging of charge and spin diffusion in semiconductors