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Nondestructive measurement and high-precision evaluation of the electrical conductivity of doped GaAs wafers using microwaves
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10.1063/1.3518038
/content/aip/journal/rsi/81/12/10.1063/1.3518038
http://aip.metastore.ingenta.com/content/aip/journal/rsi/81/12/10.1063/1.3518038

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagram of the measurement instrument.

Image of FIG. 2.
FIG. 2.

(Color online) Photograph of the experimental instrument with a doped GaAs wafer under measurement.

Image of FIG. 3.
FIG. 3.

(Color online) The evaluated conductivities in comparison with those measured by the HEM method.

Tables

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Table I.

Characteristics of the seven doped GaAs wafers.

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/content/aip/journal/rsi/81/12/10.1063/1.3518038
2010-12-06
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nondestructive measurement and high-precision evaluation of the electrical conductivity of doped GaAs wafers using microwaves
http://aip.metastore.ingenta.com/content/aip/journal/rsi/81/12/10.1063/1.3518038
10.1063/1.3518038
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