(a) A photograph of a silicon die, showing the piezoresistive strain gauge elements. (b) One-quarter section of a silicon die plus the strain isolating pedestal. (c) The signal conditioning circuit. Adapted from Ref. 50.
Schematic of the Wheatstone bridge and miniature silicon piezoresistive pressure sensor chip used in the unsteady pressure sensor developed by Mansour et al. (Ref. 53).
Typical voltage mode-type PPS.
Principle of LDM sensor.
Schematic of a typical PSP measurement system.
Pressure map obtained under a well-established flow condition in a Laval nozzle by the use of TLC-based porous PSP. Adapted from Ref. 67.
Dual hot-wire aspiring probe to simultaneously measure total temperature and total pressure in an unsteady high-speed gas flow developed by Ng and Epstein (Ref. 95).
Unsteady thin-film temperature probe developed by Mansour et al. (Ref. 53).
Some of the measurement techniques for unsteady pressure in literature.
Some of the measurement techniques for unsteady temperature in literature.
Advantages and limitations of the unsteady pressure measurement techniques.
Advantages and limitations of the unsteady temperature measurement techniques.
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