(a) Sample structure, (b) schematic of the sample preparation, (c) micrograph of the prepared sample, and (d) magnified surface observation of thick GaAs epitaxial layer. The size of BN plate is .
Wide range XRD scan for the thick GaAs film before and after ELO preparation.
(a) XRD curve around GaAs (006) reflection before and after ELO preparation, and (b) detector side slit width dependence of XRD curve around GaAs (004) reflection after the preparation.
(a) XAFS spectrum, (b) oscillation, and (c) RDF around Ga K-edge absorption edge for the thick GaAs sample measured at transmission mode.
(a) XAFS spectrum, (b) oscillation, and (c) RDF around Ga K-edge absorption edge for the thick GaAs sample measured at fluorescence mode.
Fitted parameters for the XAFS measurements. The coordination number of Ga–As first shell was fixed at 4. is the first nearest-neighbor Ga–As bond length, is Debye–Waller factor, and is mean-free path. The R-factor gives the quality of fitting, (Ref. 10) here we employ with and of experimentally and theoretically obtained values of , respectively.
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