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Epitaxial lift-off for sample preparation of x-ray absorption fine structure
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10.1063/1.3355038
/content/aip/journal/rsi/81/4/10.1063/1.3355038
http://aip.metastore.ingenta.com/content/aip/journal/rsi/81/4/10.1063/1.3355038

Figures

Image of FIG. 1.
FIG. 1.

(a) Sample structure, (b) schematic of the sample preparation, (c) micrograph of the prepared sample, and (d) magnified surface observation of thick GaAs epitaxial layer. The size of BN plate is .

Image of FIG. 2.
FIG. 2.

Wide range XRD scan for the thick GaAs film before and after ELO preparation.

Image of FIG. 3.
FIG. 3.

(a) XRD curve around GaAs (006) reflection before and after ELO preparation, and (b) detector side slit width dependence of XRD curve around GaAs (004) reflection after the preparation.

Image of FIG. 4.
FIG. 4.

(a) XAFS spectrum, (b) oscillation, and (c) RDF around Ga K-edge absorption edge for the thick GaAs sample measured at transmission mode.

Image of FIG. 5.
FIG. 5.

(a) XAFS spectrum, (b) oscillation, and (c) RDF around Ga K-edge absorption edge for the thick GaAs sample measured at fluorescence mode.

Tables

Generic image for table
Table I.

Fitted parameters for the XAFS measurements. The coordination number of Ga–As first shell was fixed at 4. is the first nearest-neighbor Ga–As bond length, is Debye–Waller factor, and is mean-free path. The R-factor gives the quality of fitting, (Ref. 10) here we employ with and of experimentally and theoretically obtained values of , respectively.

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/content/aip/journal/rsi/81/4/10.1063/1.3355038
2010-04-06
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial lift-off for sample preparation of x-ray absorption fine structure
http://aip.metastore.ingenta.com/content/aip/journal/rsi/81/4/10.1063/1.3355038
10.1063/1.3355038
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