Sketch of the setup for the remote and in situ measurements of carrier recombination characteristics during irradiation by protons beam: (1) measurement and remote handling components, (2)constituents for distant transfer of signals, and (3) geometry of positioning of probes, of manipulators, and of cable inlets for measurement circuitry inside vacuumated irradiation chamber. In the inset (i), a screen image of probe position control is shown (the fiber tip and MW needle-tip antennas on wafer boundary).
Variation in photoconductivity transients during various instants within irradiation exposure by 8 MeV protons at beam current of 4 nA.
Surface recombination lifetime as a function of sample thickness for different values of .
Variation in the recombination lifetime during irradiation: by 6 MeV protons at 280 K of the preirradiated material (star symbols) and by 8 MeV protons at 53 K (circles) and 280 K (triangles) temperatures of the initial MCZ Si as a function of the exposure time.
(a) Variation in recombination lifetime during irradiation by 3 MeV protons at 280 K for location of probes at from the wafer front surface; (b) the depth profile of the recombination lifetime distribution after irradiation by 3 MeV protons.
Variation in the inverse recombination ( square symbols) and trapping lifetimes of different carrier decay components as a function of the reciprocal thermal energy in MCZ Si sample just irradiated with 8 MeV protons at 280 K (crosses for tr-1 and triangles for tr-2).
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