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The detection of electron-beam-induced current in junctionless semiconductor
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10.1063/1.3436649
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Affiliations:
1 School of Electrical and Electronic Engineering, Nanyang Technological University, Block S2, Nanyang Avenue, Singapore 639798
Rev. Sci. Instrum. 81, 064703 (2010)
/content/aip/journal/rsi/81/6/10.1063/1.3436649
http://aip.metastore.ingenta.com/content/aip/journal/rsi/81/6/10.1063/1.3436649
View: Figures

Figures

FIG. 1.

Normal-collector configuration.

FIG. 2.

Planar-collector configuration.

FIG. 3.

Electron-beam-induced conductivity configuration.

FIG. 4.

Two-point probe junctionless EBIC configuration.

FIG. 5.

vs for different sample thicknesses , , , , , , and .

FIG. 6.

vs for different , , , , , , and .

FIG. 7.

vs for different , , , , , , and .

FIG. 8.

vs for different depths of the generation volume , , , , , , and .

FIG. 9.

vs for different , , , , , , and .

FIG. 10.

vs for different , , , , , , and .

FIG. 11.

vs at different bias, , , , , , and ,

FIG. 12.

vs at different bias, , , , , , and .

FIG. 13.

vs for different , , , , , , and .

/content/aip/journal/rsi/81/6/10.1063/1.3436649
2010-06-11
2014-04-23

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