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Setup of the manipulation stage consisting of a commercial optical microscope (Leica DM 2500 MH), two (x, y, z) micromanipulators (Thorlabs), and a heating stage mounted onto a cross table.
(a) SEM image of the end of an In tip (apex radius r ≈ 180 nm). (b) Optical image of an In tip approached to a field of InAs nanowires with 1 m pitch; the nanowire to be captured is marked by an arrow. (c) Same nanowire at the In tip after the pick-up procedure. (d) Nanowire of length l ≈ 15 m placed onto the corner of a cleaved GaAs wafer and contacted twice by In microsoldering25,26 (enhanced online). [URL: http://dx.doi.org/10.1063/1.3657135.1]10.1063/1.3657135.1
SEM image of InAs nanowires placed on top of Pt contacts; averaged accuracy: (Δx, Δy) = (0.6, 0.9) μm lateral, Δα = 9° angular.
(a) SEM image of an InAs nanowire positioned across a hole within a Si3N4 membrane. The wire is contacted by four Ti/Au electrodes. (b) Magnetoresistance of this nanowire recorded by a four-terminal measurement at different temperatures as indicated.
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