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Manipulating InAs nanowires with submicrometer precision
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10.1063/1.3657135
/content/aip/journal/rsi/82/11/10.1063/1.3657135
http://aip.metastore.ingenta.com/content/aip/journal/rsi/82/11/10.1063/1.3657135

Figures

Image of FIG. 1.
FIG. 1.

Setup of the manipulation stage consisting of a commercial optical microscope (Leica DM 2500 MH), two (x, y, z) micromanipulators (Thorlabs), and a heating stage mounted onto a cross table.

Image of FIG. 2.
FIG. 2.

(a) SEM image of the end of an In tip (apex radius r ≈ 180 nm). (b) Optical image of an In tip approached to a field of InAs nanowires with 1 m pitch; the nanowire to be captured is marked by an arrow. (c) Same nanowire at the In tip after the pick-up procedure. (d) Nanowire of length l ≈ 15 m placed onto the corner of a cleaved GaAs wafer and contacted twice by In microsoldering25,26 (enhanced online). [URL: http://dx.doi.org/10.1063/1.3657135.1]10.1063/1.3657135.1

Image of FIG. 3.
FIG. 3.

SEM image of InAs nanowires placed on top of Pt contacts; averaged accuracy: (Δx, Δy) = (0.6, 0.9) μm lateral, Δα = 9° angular.

Image of FIG. 4.
FIG. 4.

(a) SEM image of an InAs nanowire positioned across a hole within a Si3N4 membrane. The wire is contacted by four Ti/Au electrodes. (b) Magnetoresistance of this nanowire recorded by a four-terminal measurement at different temperatures as indicated.

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/content/aip/journal/rsi/82/11/10.1063/1.3657135
2011-11-16
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Manipulating InAs nanowires with submicrometer precision
http://aip.metastore.ingenta.com/content/aip/journal/rsi/82/11/10.1063/1.3657135
10.1063/1.3657135
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