Fabrication process flow of cantilever array silicon-on-insulator (SOI) wafers. LPCVD: low pressure chemical vapor deposition; RIE: reactive-ion-etching; DRIE: deep reactive-ion-etching; HF: hydrofluoric acid etching.
(a) Photo of a 4-inch cantilever array SOI wafer after deposition of a Fe-Pd-W thin film materials library through a micro-machined Si shadow mask. The deposited areas appear in gray. (b) A scanning electron microscopy image of un-coated cantilevers.
Scheme of the experimental setup of the DHM.
Reconstructed images of a coated cantilever: (a) intensity, (b) phase of the selected area, and (c) 3D surface profile converted from the phase image. Note that the curvature is exaggerated by scaling of axes.
3D surface profile of a coated cantilever obtained by DHM. The 10 nm out-of-plane resolution allows simultaneous and precise evaluation of the deposited film thickness and the radius of curvature of the cantilever.
The distribution of (a) film thickness, (b) change of curvature, and (c) calculated film stress corresponding to the location of each measured cantilever.
(a) Color-coded visualization of thin film stresses in a ternary composition diagram. (b) Quantitative composition-dependent film stress plot across an exemplary composition range indicated by the dotted line in (a).
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