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Note: Determination of temperature dependence of GaP bandgap energy from diode temperature response characteristics
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10.1063/1.3626902
/content/aip/journal/rsi/82/8/10.1063/1.3626902
http://aip.metastore.ingenta.com/content/aip/journal/rsi/82/8/10.1063/1.3626902
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

U(T, I) characteristics of the GaP diodes. Experimental data are shown as separate points and solid lines correspond to the results of approximation of U(T, I) experimental data by the least-squares fit (Ref. 7).

Image of FIG. 2.
FIG. 2.

n(T) dependence of the GaP diodes: separate points represent averaged values of n obtained by the I-U characteristics processing; the solid curve is the power-law fitting (Ref. 7) of the form y = ax b , where a = 2.79 and b = −0.076.

Image of FIG. 3.
FIG. 3.

E g (T) dependence of p+-n GaP diode: the values of E g (T) calculated using Eq. (5) are shown as separate points; the solid curve is the approximation by dependence: E g (T) = 2.325 − 5.1 × 10−4(T 2/(T + 470)).

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/content/aip/journal/rsi/82/8/10.1063/1.3626902
2011-08-19
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Note: Determination of temperature dependence of GaP bandgap energy from diode temperature response characteristics
http://aip.metastore.ingenta.com/content/aip/journal/rsi/82/8/10.1063/1.3626902
10.1063/1.3626902
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